Manufacturing of high performance VIS-NIR beam splitters by plasma assisted thin film deposition technologies

2018 ◽  
Author(s):  
Thomas Weber ◽  
Marc Lappschies ◽  
Stefan Jakobs
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Beam Splitters

Organic Electronics

2020 ◽  
Author(s):  
Stephen R. Forrest
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Devices ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Graduate Studies ◽  
Organic Light

Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devices in organic electronics. It is a product of both one and two semester courses that have been taught over a period of more than two decades. The target audiences are students at all levels of graduate studies, highly motivated senior undergraduates, and practicing engineers and scientists. The book is divided into two sections. Part I, Foundations, lays down the fundamental principles of the field of organic electronics. It is assumed that the reader has an elementary knowledge of quantum mechanics, and electricity and magnetism. Background knowledge of organic chemistry is not required. Part II, Applications, focuses on organic electronic devices. It begins with a discussion of organic thin film deposition and patterning, followed by chapters on organic light emitters, detectors, and thin film transistors. The last chapter describes several devices and phenomena that are not covered in the previous chapters, since they lie outside of the current mainstream of the field, but are nevertheless important.

Multi-layer thin-film deposition for high-performance X-ray field-emission characteristics

2021 ◽  
pp. 2140043
Author(s):  
Tae Hwan Jang ◽  
Tae Gyu Kim ◽  
Mun Ki Bae ◽  
Kyuseok Kim ◽  
Jaegu Choi
Keyword(s):  
Thin Film ◽  
Field Emission ◽  
High Performance ◽  
Low Voltage ◽  
High Vacuum ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Emission Effect ◽  
Layer Thin Film

In this study, we developed a nanoscale emitter having a multi-layer thin-film nanostructure in an effort to maximize the field-emission effect with a low voltage difference. The emitter was a sapphire board on which tungsten–DLC multi-player thin film was deposited using PVD and CVD processes. This multi-layer thin-film emitter was examined in a high-vacuum X-ray tube system. Its field-emission efficiency according to the applied voltage was then analyzed.

High-performance thin-film protonic ceramic fuel cells fabricated on anode supports with a non-proton-conducting ceramic matrix

2016 ◽  
Vol 4 (17) ◽  
pp. 6395-6403 ◽  
Author(s):  
Kiho Bae ◽  
Ho-Sung Noh ◽  
Dong Young Jang ◽  
Jongsup Hong ◽  
Hyoungchul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Fuel Cells ◽  
High Performance ◽  
Ceramic Matrix ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Fabrication Method ◽  
Proton Conducting ◽  
Ceramic Fuel ◽  
Ceramic Fuel Cells

We proposed a facile and reliable fabrication method by implementing a novel cell platform and thin-film-deposition based protonic ceramic fuel cells.

scholarly journals Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1380
Author(s):  
Mircea Nicolaescu ◽  
Cornelia Bandas ◽  
Corina Orha ◽  
Viorel Şerban ◽  
Carmen Lazău ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Morphological Characteristics ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Synthesis Process ◽  
Second Step ◽  
X Ray Diffraction ◽  
Uv Photodetector ◽  
X Ray

The heterojunction based on n-TiO2 nanolayer/p-CuMnO2 thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO2 nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO2). The second step consisted of CuMnO2 thin film deposition onto the surface of Ti-TiO2 using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the n-TiO2/p-CuMnO2 junction. The I-V measurements of the n-TiO2 nanolayer/p-CuMnO2 thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors.

Co-Optimization of Si Thin-Film Deposition and Excimer Laser Anneal Processes for Fabrication of High-Performance p-Si TFTs

1998 ◽  
Vol 508 ◽  
Author(s):  
A.T. Voutsas ◽  
A. Marmorstein ◽  
R. Solanki
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Defect Density ◽  
Laser Energy ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Process Window ◽  
Laser Crystallization

AbstractIn this work we have co-optimized the deposition and excimer laser crystallization processes for formation of high quality, low-temperature, p-Si films (LPS). We have found that the post-ELA polysilicon structure is very sensitive to deposition process adjustments, collectively expressed by the deposition rate. At low rates the PECVD Si-film is deposited in the microcrystalline phase (µc-Si). Comparing µc-Si and a-Si film precursors, we have shown that at equivalent annealing conditions (laser energy density) polysilicon films obtained from µc-Si precursor demonstrate improved crystallinity (grain size, defect density). Polysilicon thin film transistors (p-Si TFTs) have been fabricated and characterized using this material and compared to our standard process. We have found that the performance of µc-Si precursor exceeds by 20-50% that of a-Si precursor. Use of µc-Si precursor may also have important implications in reducing substrate damage during ELA process and for widening the ELA process window.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

CVD copper thin film deposition using (α-methylstyrene)Cu(I)(hfac)

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Copper Thin Film
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