Study of the Process of Mixing, Temperature, and Small Signal Gain in the Active Medium of Supersonic COIL With Advanced Nozzle Bank and DC Discharge Method of O2(1 Delta) Production in a Vortex Tube

2001 ◽  
Author(s):  
Valeri Nikolaev
2002 ◽  
Author(s):  
Andrei A. Ionin ◽  
Andrei A. Kotkov ◽  
Yurii M. Klimachev ◽  
Leonid V. Seleznev ◽  
Dmitrii V. Sinitsyn ◽  
...  

1986 ◽  
Vol 64 (6) ◽  
pp. 743-745
Author(s):  
R. Marchand ◽  
R. Fedosejevs ◽  
I. V. Tomov

Quenching of the forward Stokes by phase matching in a Raman-active medium is revisited. A parameter range is identified where the small signal gain of the forward Stokes is a decreasing function of the pump intensity. The relevance of this effect to the reduction of the troublesome second Stokes in a Raman laser-pulse compressor is also discussed.


2008 ◽  
Vol 38 (9) ◽  
pp. 833-839 ◽  
Author(s):  
A A Ionin ◽  
Yu M Klimachev ◽  
A Yu Kozlov ◽  
A A Kotkov ◽  
A K Kurnosov ◽  
...  

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.


1974 ◽  
Vol 25 (10) ◽  
pp. 602-605 ◽  
Author(s):  
G. T. Schappert ◽  
E. E. Stark

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