Quenching of the forward Stokes by phase matching

1986 ◽  
Vol 64 (6) ◽  
pp. 743-745
Author(s):  
R. Marchand ◽  
R. Fedosejevs ◽  
I. V. Tomov
Keyword(s):  
Laser Pulse ◽  
Active Medium ◽  
Raman Laser ◽  
Pump Intensity ◽  
Parameter Range ◽  
Phase Matching ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Pulse Compressor

Quenching of the forward Stokes by phase matching in a Raman-active medium is revisited. A parameter range is identified where the small signal gain of the forward Stokes is a decreasing function of the pump intensity. The relevance of this effect to the reduction of the troublesome second Stokes in a Raman laser-pulse compressor is also discussed.

Small-signal gain and kinetic processes on highly excited vibrational levels in active medium of pulsed first-overtone CO laser

2002 ◽  
Author(s):  
Andrei A. Ionin ◽  
Andrei A. Kotkov ◽  
Yurii M. Klimachev ◽  
Leonid V. Seleznev ◽  
Dmitrii V. Sinitsyn ◽  
...  
Keyword(s):  
Active Medium ◽  
Small Signal Gain ◽  
Small Signal ◽  
Co Laser ◽  
Signal Gain ◽  
Vibrational Levels ◽  
Kinetic Processes

Influence of small oxygen additions on the small-signal-gain dynamics in the active medium of a pulsed electron-beam-controlled discharge CO laser

2008 ◽  
Vol 38 (9) ◽  
pp. 833-839 ◽  
Author(s):  
A A Ionin ◽  
Yu M Klimachev ◽  
A Yu Kozlov ◽  
A A Kotkov ◽  
A K Kurnosov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Active Medium ◽  
Small Signal Gain ◽  
Small Signal ◽  
Co Laser ◽  
Signal Gain ◽  
Pulsed Electron Beam

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

Toward a zero small‐signal gain laser power amplifier

1974 ◽  
Vol 25 (10) ◽  
pp. 602-605 ◽  
Author(s):  
G. T. Schappert ◽  
E. E. Stark
Keyword(s):  
Power Amplifier ◽  
Laser Power ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain
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