Optical Characterization of Rare Earth-doped Wide Band Gap Semiconductors

1999 ◽  
Author(s):  
Uwe Hommerich
Keyword(s):  
Rare Earth ◽  
Band Gap ◽  
Wide Band ◽  
Optical Characterization ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Rare Earth Doped

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

scholarly journals Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

2013 ◽  
Vol 87 (15) ◽  
Author(s):  
Yongfeng Li ◽  
Rui Deng ◽  
Weinan Lin ◽  
Yufeng Tian ◽  
Haiyang Peng ◽  
...  
Keyword(s):  
Rare Earth ◽  
Band Gap ◽  
Kondo Effect ◽  
Wide Band ◽  
Wide Band Gap ◽  
Rare Earth Doped

Nanostructured A2(RE,B)O6 (A = Ba, Sr; RE = Rare-Earth; B = Sb, Zr) Perovskite Ceramics and their Potential Applications in Microwave and Superconducting Electronics

2012 ◽  
Vol 545 ◽  
pp. 27-31 ◽  
Author(s):  
P.R.S. Wariar ◽  
V.R. Kumar ◽  
V.M. Nair ◽  
M.M. Yusoff ◽  
R. Jose ◽  
...  
Keyword(s):  
Rare Earth ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Practical Applications ◽  
Ceramic Superconductors ◽  
Low Dielectric ◽  
Potential Applications ◽  
Wide Band Gap Semiconductors ◽  
Perovskite Lattice

A group of perovskites with general formula A2(RE,B)O6(A=Ba, Sr; RE=Rare-Earth; B=Sb, Zr) were synthesized as nanocrystals owing to the enhanced specific surface area that nanomaterials posses. These perovskites are characterized by varied crystal structure depends on the relative sizes of the cations occupying the A and B sites of the perovskite lattice. The new materials were either insulators or semiconductors. They possess moderate dielectric constant (~30) and relatively low dielectric loss (10-4); and therefore, they could be used as substrates in microwave circuits. Some of them falls to the semiconducting range with band gap ~3.3 eV; and therefore, could be used as transparent wide band gap semiconductors. Furthermore, the new perovskites were found to be chemically stable with two mostly considered high temperature ceramic superconductors for practical applications, viz. YBa2Cu3O7-δ(YBCO) and (Bi,Pb)2Sr2Ca2Cu3Ox(BSCCO).

Characterization of defects and impurities in wide band gap semiconductors by cathodoluminescence in TEM

1991 ◽  
Vol 49 ◽  
pp. 836-837
Author(s):  
R.J. Graham
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Optically Active ◽  
Semiconducting Materials ◽  
Electronic Information ◽  
Wide Band Gap ◽  
Low Concentrations ◽  
Wide Band Gap Semiconductors ◽  
Gan On Si

As a characterization technique for semiconductors, cathodoluminescence (CL) performed in TEM has several useful advantages over the more common SEM-based technique, the most important being that the acquisition of CL data from localized regions in an electron transparent specimen allows a correlation of microstructural and optical/electronic information. For example, it is possible to determine the distribution of low concentrations of optically active impurities and their possible association with defects, often at submicron resolution. Examples of TEM CL as a method of characterizing defects in semiconducting materials presented here are taken from wide band gap materials which are of current interest including CVD-grown diamond films and β-GaN on Si.

Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution

2001 ◽  
Vol 89 (2) ◽  
pp. 1130-1137 ◽  
Author(s):  
Minseo Park ◽  
C. W. Teng ◽  
V. Sakhrani ◽  
M. B. McLaurin ◽  
R. M. Kolbas ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Optical Characterization ◽  
Amorphous Semiconductors ◽  
Wide Band Gap ◽  
Hydrogen Dilution

Controlled hydrothermal growth and optical characterization of wide band gap Be x Zn1−x O nanorod arrays

2013 ◽  
Vol 48 (11) ◽  
pp. 3936-3942 ◽  
Author(s):  
Chunyan Zeng ◽  
Weixin Zhang ◽  
Bin Bin Li ◽  
Xiaofeng Xu ◽  
Christina F. de Souza ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Optical Characterization ◽  
Hydrothermal Growth ◽  
Nanorod Arrays ◽  
Wide Band Gap

The Rare Earth PAC Probe 172Lu in Wide Band-Gap Semiconductors

2004 ◽  
Vol 158 (1-4) ◽  
pp. 281-284 ◽  
Author(s):  
R. Nédélec ◽  
R. Vianden ◽  
Keyword(s):  
Rare Earth ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
The Rare Earth
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