Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

2006 ◽  
Vol 40 (4-6) ◽  
pp. 279-288 ◽  
Author(s):  
J.L. Weyher
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Selective Etching ◽  
Wide Band Gap ◽  
Complementary Methods ◽  
Wide Band Gap Semiconductors

Characterization of defects and impurities in wide band gap semiconductors by cathodoluminescence in TEM

1991 ◽  
Vol 49 ◽  
pp. 836-837
Author(s):  
R.J. Graham
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Optically Active ◽  
Semiconducting Materials ◽  
Electronic Information ◽  
Wide Band Gap ◽  
Low Concentrations ◽  
Wide Band Gap Semiconductors ◽  
Gan On Si

As a characterization technique for semiconductors, cathodoluminescence (CL) performed in TEM has several useful advantages over the more common SEM-based technique, the most important being that the acquisition of CL data from localized regions in an electron transparent specimen allows a correlation of microstructural and optical/electronic information. For example, it is possible to determine the distribution of low concentrations of optically active impurities and their possible association with defects, often at submicron resolution. Examples of TEM CL as a method of characterizing defects in semiconducting materials presented here are taken from wide band gap materials which are of current interest including CVD-grown diamond films and β-GaN on Si.

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

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