VLSI (Very Large Scale Integrated Circuits) Implementation of a Quantized Sinusoid Filter Algorithm and Its Use to Compute the Discrete Fourier Transform

1986 ◽  
Author(s):  
Wiehrs L. Collier
Keyword(s):  
Fourier Transform ◽  
Integrated Circuits ◽  
Discrete Fourier Transform ◽  
Large Scale

scholarly journals Large-Scale Discrete Fourier Transform on TPUs

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Tianjian Lu ◽  
Yi-Fan Chen ◽  
Blake Hechtman ◽  
Tao Wang ◽  
John Anderson
Keyword(s):  
Fourier Transform ◽  
Discrete Fourier Transform ◽  
Large Scale

scholarly journals Improving Generalized Discrete Fourier Transform (GDFT) Filter Banks with Low-Complexity and Reconfigurable Hybrid Algorithm

Digital ◽  
2020 ◽  
Vol 1 (1) ◽  
pp. 1-17
Author(s):  
Temidayo Otunniyi ◽  
Hermanus Myburgh
Keyword(s):  
Fourier Transform ◽  
Integrated Circuits ◽  
Power Consumption ◽  
Discrete Fourier Transform ◽  
High Speed ◽  
Filter Bank ◽  
Filter Design ◽  
Low Complexity ◽  
Lookup Table ◽  
Research Attention

With ever-increasing wireless network demands, low-complexity reconfigurable filter design is expected to continue to require research attention. Extracting and reconfiguring channels of choice from multi-standard receivers using a generalized discrete Fourier transform filter bank (GDFT-FB) is computationally intensive. In this work, a lower compexity algorithm is written for this transform. The design employs two different approaches: hybridization of the generalized discrete Fourier transform filter bank with frequency response masking and coefficient decimation method 1; and the improvement and implementation of the hybrid generalized discrete Fourier transform using a parallel distributed arithmetic-based residual number system (PDA-RNS) filter. The design is evaluated using MATLAB 2020a. Synthesis of area, resource utilization, delay, and power consumption was done on a Quartus 11 Altera 90 using the very high-speed integrated circuits (VHSIC) hardware description language. During MATLAB simulations, the proposed HGDFT algorithm attained a 66% reduction, in terms of number of multipliers, compared with existing algorithms. From co-simulation on the Quartus 11 Altera 90, optimization of the filter with PDA-RNS resulted in a 77% reduction in the number of occupied lookup table (LUT) slices, an 83% reduction in power consumption, and an 11% reduction in execution time, when compared with existing methods.

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Sign in / Sign up

Export Citation Format

Share Document