An Engineering Study Comparing Insulation Resistance to Dielectric Strength Testing

1971 ◽  
Author(s):  
Richard J. Memice
Keyword(s):  
Dielectric Strength ◽  
Strength Testing ◽  
Insulation Resistance ◽  
Engineering Study

The Microbiological Deterioration of Rubber Insulation

1953 ◽  
Vol 26 (4) ◽  
pp. 869-883
Author(s):  
John T. Blake ◽  
Donald W. Kitchin ◽  
Orison S. Pratt
Keyword(s):  
Dielectric Strength ◽  
Insulation Resistance ◽  
Great Care ◽  
Moist Air ◽  
Humid Atmosphere ◽  
Buried Cables ◽  
High Insulation ◽  
Pass Through ◽  
In Transit ◽  
Voltage Breakdown

Abstract Experiments on natural rubber and GR-S insulation in various forms have shown them to be inherently vulnerable to fungus attack unless made sufficiently fungitoxic. Stable fungitoxic GR-S compounds have been developed in this work which have invariably maintained normal high insulation resistance during four years in active soil. Thin Neoprene jackets may be permeable to fungi so that underlying insulation should be fungitoxic or inherently stable. A humid atmosphere as in a wet duct may be a dangerous environment. It has been shown that inoculated wire can fail in moist air due to fungus penetration. Parallel electrical tests on wire and culture tests on agar-filled tubes demonstrated that the electrical failures in soil were caused by fungus penetration. It was possible to detect and identify fungus in transit in thick walls of GR-S insulation. Three types of fungi which can pass through rubber insulation and thin Neoprene jackets have been identified, at least by genus. The most prevalent has been Spicaria violacea Abbott. The presence of fungus in insulation lowers the dielectric strength before the filaments have passed completely through the wall. Impending failure can be detected by voltage breakdown tests. Rubber insulation in buried cables must be sufficiently fungitoxic. Great care is required in formulating stable compounds to insure that other required properties are not harmed.

scholarly journals Development of a dielectric ceramic based on diatomite-titania part two: dielectric properties characterization

Cerâmica ◽  
1998 ◽  
Vol 44 (287-288) ◽  
pp. 136-140
Author(s):  
Jamilson Pinto Medeiros ◽  
Elcio Correia de Souza Tavares ◽  
Uilame Umbelino Gomes ◽  
Wilson Acchar
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Temperature Coefficient ◽  
Sintering Temperature ◽  
Dielectric Strength ◽  
Dissipation Factor ◽  
Insulation Resistance ◽  
Dielectric Ceramic ◽  
Dc Voltage ◽  
Titania Content

Dielectric properties of sintered diatomite-titania ceramics are presented. Specific capacitance, dissipation factor, quality factor and dielectric constant were determined as a function of sintering temperature, titania content and frequency; the temperature coefficient of capacitance was measured as a function of frequency. Besides leakage current, the dependence of the insulation resistance and the dielectric strength on the applied dc voltage were studied. The results show that diatomite-titania compositions can be used as an alternative dielectric.

Clinical Update: Strength Testing–Grip and Pinch

1999 ◽  
Vol 4 (3) ◽  
pp. 9-10
Author(s):  
Margit L. Bleeker ◽  
Sania Amr
Keyword(s):  
Strength Testing

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Sign in / Sign up

Export Citation Format

Share Document