Laboratory Evaluation Of Foaming Agents For High Temperature Applications -II. Measurements Of Thermal Stability And Foam Mobility In Porous Media

1985 ◽  
Author(s):  
B.B. Maini
Keyword(s):  
Thermal Stability ◽  
Porous Media ◽  
High Temperature ◽  
Laboratory Evaluation ◽  
Foaming Agents ◽  
Temperature Applications

Studies on thermal stability and life estimation of epoxy adhesive by thermogravimetric analysis for high-temperature applications

2020 ◽  
Vol 43 (1) ◽  
Author(s):  
TANU SRIVASTAVA ◽  
NARESH KUMAR KATARI ◽  
BALAJI RAO RAVURI ◽  
JUHI KUSHWAHA ◽  
S KRISHNA MOHAN ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Thermogravimetric Analysis ◽  
Epoxy Adhesive ◽  
Life Estimation ◽  
Temperature Applications

An SEM Investigation of Annealing Encapsulants for SiC

2000 ◽  
Vol 6 (S2) ◽  
pp. 1094-1095
Author(s):  
M. H. Ervin ◽  
K. A. Jones ◽  
M. A. Derenge ◽  
K. W. Kirchnef ◽  
M.C. Wood ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Engine Oil ◽  
Robust Performance ◽  
Chemical Inertness ◽  
High Breakdown Electric Field ◽  
Sem Investigation ◽  
Temperature Applications

Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.

Thermal Stability of Intermetallic Cu–Sn Interconnections for High Temperature Applications

2018 ◽  
Vol 15 (1) ◽  
pp. 35-40
Author(s):  
A. Novikov ◽  
M. Nowottnick
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Test Bench ◽  
Solder Joints ◽  
New Technology ◽  
Solder Paste ◽  
Special Test ◽  
Standard Alloy ◽  
Thermal Stability Of ◽  
Temperature Applications

New technology based on mixing of standard alloy SnCu in form of solder paste with copper paste was presented. This technology allows the production of solder joints with higher standoff consisting of intermetallic compounds. Such solder joints were qualified for high temperature applications by investigation of thermal stability of overlapped solder joints. For this purpose a special test bench for the investigation of remelting temperature up to 300°C was developed.

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