scholarly journals Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique

2016 ◽  
Vol 124 (10) ◽  
pp. 1127-1131 ◽  
Author(s):  
Shinya KONDO ◽  
Tomoaki YAMADA ◽  
Masahito YOSHINO ◽  
Tadashi SHIOTA ◽  
Kazuo SHINOZAKI ◽  
...  
Keyword(s):  
Thin Films ◽  
Significant Suppression ◽  
Island Growth ◽  
Growth Technique ◽  
Step Growth

Dislocations in charge-ordered Pr0.5Ca0.5MnO3epitaxial thin films prepared by a two-step growth technique

2010 ◽  
Vol 90 (5) ◽  
pp. 323-336 ◽  
Author(s):  
Y.L. Zhu ◽  
X. Wang ◽  
M.J. Zhuo ◽  
Y.Q. Zhang ◽  
X.L. Ma
Keyword(s):  
Thin Films ◽  
Growth Technique ◽  
Step Growth

Structural and dielectric properties of strain-controlled epitaxial SrTiO3 thin films by two-step growth technique

2005 ◽  
Vol 98 (5) ◽  
pp. 054105 ◽  
Author(s):  
Tomoaki Yamada ◽  
Konstantin F. Astafiev ◽  
Vladimir O. Sherman ◽  
Alexander K. Tagantsev ◽  
Dong Su ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Growth Technique ◽  
Step Growth

Strain relaxation of epitaxial SrTiO3 thin films on LaAlO3 by two-step growth technique

2005 ◽  
Vol 86 (14) ◽  
pp. 142904 ◽  
Author(s):  
Tomoaki Yamada ◽  
Konstantin F. Astafiev ◽  
Vladimir O. Sherman ◽  
Alexander K. Tagantsev ◽  
Paul Muralt ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Growth Technique ◽  
Step Growth

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Akasaka ◽  
D. He ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
In Situ Observation ◽  
Layer By Layer ◽  
High Quality ◽  
Deposition Parameters ◽  
Columnar Grains ◽  
Step Growth

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process

2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
High Mobility ◽  
Insb Thin Films ◽  
Step Growth

New two-step growth of microcrystalline silicon thin films without incubation layer

2011 ◽  
Vol 322 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Hongyun Yue ◽  
Aimin Wu ◽  
Xueyu Zhang ◽  
Tingju Li
Keyword(s):  
Thin Films ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Step Growth

Single-step growth of CuInS2 nanospheres morphology thin films by electrospray chemical aerosol deposition technique

2019 ◽  
Vol 238 ◽  
pp. 206-209
Author(s):  
Logu Thirumalaisamy ◽  
Soundarrajan Palanivel ◽  
Ramesh Raliya ◽  
Shalinee Kavadiya ◽  
Kunjithapatham Sethuraman ◽  
...  
Keyword(s):  
Thin Films ◽  
Aerosol Deposition ◽  
Single Step ◽  
Deposition Technique ◽  
Step Growth

scholarly journals H<sub>2</sub>S dosimeter with controllable percolation threshold based on semi-conducting copper oxide thin films

2017 ◽  
Vol 6 (1) ◽  
pp. 163-170 ◽  
Author(s):  
Christoph Seitz ◽  
Giuliana Beck ◽  
Jörg Hennemann ◽  
Christian Kandzia ◽  
Karl P. Hering ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Percolation Threshold ◽  
Structural Parameters ◽  
Electrical Conductance ◽  
Copper Oxides ◽  
Island Growth ◽  
Switching Behaviour ◽  
The Impact ◽  
H2s Detection

Abstract. Copper oxides, such as CuO and Cu2O, are promising materials for H2S detection because of the reversible reaction with H2S to copper sulfides (CuS, Cu2S). Along with the phase change, the electrical conductance increases by several orders of magnitude. On CuOx films the H2S reaction causes the formation of statistically distributed CuxS islands. Continuous exposition to H2S leads to island growth and eventually to the formation of an electrical highly conductive path traversing the entire system: the so-called percolation path. The associated CuOx ∕ CuxS conversion ratio is referred to as the percolation threshold. This pronounced threshold causes a gas concentration dependent switch-like behaviour of the film conductance. However, to utilize this effect for the preparation of CuO-based H2S sensors, a profound understanding of the operational and morphological parameters influencing the CuS path evolution is needed.Thus, this article is focused on basic features of H2S detection by copper oxide films and the influence of structural parameters on the percolation threshold and switching behaviour. In particular, two important factors, namely the stoichiometry of copper oxides (CuO, Cu2O and Cu4O3) and surface morphology, are investigated in detail. CuOx thin films were synthesized by a radio frequency magnetron sputtering process which allows modification of these parameters. It could be shown that, for instance, the impact on the switching behaviour is dominated by morphology rather than stoichiometry of copper oxide.

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