Strain relaxation of epitaxial SrTiO3 thin films on LaAlO3 by two-step growth technique

2005 ◽  
Vol 86 (14) ◽  
pp. 142904 ◽  
Author(s):  
Tomoaki Yamada ◽  
Konstantin F. Astafiev ◽  
Vladimir O. Sherman ◽  
Alexander K. Tagantsev ◽  
Paul Muralt ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Growth Technique ◽  
Step Growth

Dislocations in charge-ordered Pr0.5Ca0.5MnO3epitaxial thin films prepared by a two-step growth technique

2010 ◽  
Vol 90 (5) ◽  
pp. 323-336 ◽  
Author(s):  
Y.L. Zhu ◽  
X. Wang ◽  
M.J. Zhuo ◽  
Y.Q. Zhang ◽  
X.L. Ma
Keyword(s):  
Thin Films ◽  
Growth Technique ◽  
Step Growth

Strain Relaxation and Dislocation Confinement in Epitaxial SrTiO3 by Two-Step Growth Technique and the Resulting Dielectric Response

2005 ◽  
Vol 902 ◽  
Author(s):  
Tomoaki Yamada ◽  
Vladimir O. Sherman ◽  
Alexander K. Tagantsev ◽  
Dong Su ◽  
Paul Muralt ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Effective Strain ◽  
Microwave Dielectric Properties ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Initial Growth ◽  
Growth Step ◽  
Growth Technique ◽  
Step Growth

AbstractA two-step growth technique was used to achieve effective strain relaxation and dislocation confinement of epitaxial SrTiO3(STO) films and through this to improve their microwave dielectric properties. The crystallization of a very thin quasi-amorphous STO layer deposited at a low temperature in the initial growth step enhanced the strain relaxation from the lattice mismatch at the expense of the formation of high density of misfit dislocations. By varying the thickness of the first layer, different strain states of the films were systematically achieved while keeping the total film thickness unchanged. This allowed the study of the effect of strain on permittivity, and showed good agreement with theoretical predictions. Further more, the two-step growth technique suppressed significantly the threading dislocation density in the film, the dislocations being confined to the first layer. This in turn caused reduction in the extrinsic dielectric loss at microwave frequency. The loss reduction was analyzed and explained based on a dielectric composite model.

Structural and dielectric properties of strain-controlled epitaxial SrTiO3 thin films by two-step growth technique

2005 ◽  
Vol 98 (5) ◽  
pp. 054105 ◽  
Author(s):  
Tomoaki Yamada ◽  
Konstantin F. Astafiev ◽  
Vladimir O. Sherman ◽  
Alexander K. Tagantsev ◽  
Dong Su ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Growth Technique ◽  
Step Growth

scholarly journals Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique

2016 ◽  
Vol 124 (10) ◽  
pp. 1127-1131 ◽  
Author(s):  
Shinya KONDO ◽  
Tomoaki YAMADA ◽  
Masahito YOSHINO ◽  
Tadashi SHIOTA ◽  
Kazuo SHINOZAKI ◽  
...  
Keyword(s):  
Thin Films ◽  
Significant Suppression ◽  
Island Growth ◽  
Growth Technique ◽  
Step Growth

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates

2004 ◽  
Vol 224 (1-4) ◽  
pp. 104-107 ◽  
Author(s):  
T Egawa ◽  
A Sakai ◽  
T Yamamoto ◽  
N Taoka ◽  
O Nakatsuka ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Step Growth

Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Akasaka ◽  
D. He ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
In Situ Observation ◽  
Layer By Layer ◽  
High Quality ◽  
Deposition Parameters ◽  
Columnar Grains ◽  
Step Growth

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process

2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
High Mobility ◽  
Insb Thin Films ◽  
Step Growth

New two-step growth of microcrystalline silicon thin films without incubation layer

2011 ◽  
Vol 322 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Hongyun Yue ◽  
Aimin Wu ◽  
Xueyu Zhang ◽  
Tingju Li
Keyword(s):  
Thin Films ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Step Growth

Single-step growth of CuInS2 nanospheres morphology thin films by electrospray chemical aerosol deposition technique

2019 ◽  
Vol 238 ◽  
pp. 206-209
Author(s):  
Logu Thirumalaisamy ◽  
Soundarrajan Palanivel ◽  
Ramesh Raliya ◽  
Shalinee Kavadiya ◽  
Kunjithapatham Sethuraman ◽  
...  
Keyword(s):  
Thin Films ◽  
Aerosol Deposition ◽  
Single Step ◽  
Deposition Technique ◽  
Step Growth

Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics

2010 ◽  
Vol 256 (10) ◽  
pp. 3299-3302 ◽  
Author(s):  
Bo-Ching He ◽  
Hua-Chiang Wen ◽  
Tun-Yuan Chinag ◽  
Zue-Chin Chang ◽  
Derming Lian ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films
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