Structural and dielectric properties of strain-controlled epitaxial SrTiO3 thin films by two-step growth technique

2005 ◽  
Vol 98 (5) ◽  
pp. 054105 ◽  
Author(s):  
Tomoaki Yamada ◽  
Konstantin F. Astafiev ◽  
Vladimir O. Sherman ◽  
Alexander K. Tagantsev ◽  
Dong Su ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Growth Technique ◽  
Step Growth

Dislocations in charge-ordered Pr0.5Ca0.5MnO3epitaxial thin films prepared by a two-step growth technique

2010 ◽  
Vol 90 (5) ◽  
pp. 323-336 ◽  
Author(s):  
Y.L. Zhu ◽  
X. Wang ◽  
M.J. Zhuo ◽  
Y.Q. Zhang ◽  
X.L. Ma
Keyword(s):  
Thin Films ◽  
Growth Technique ◽  
Step Growth

Strain relaxation of epitaxial SrTiO3 thin films on LaAlO3 by two-step growth technique

2005 ◽  
Vol 86 (14) ◽  
pp. 142904 ◽  
Author(s):  
Tomoaki Yamada ◽  
Konstantin F. Astafiev ◽  
Vladimir O. Sherman ◽  
Alexander K. Tagantsev ◽  
Paul Muralt ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Growth Technique ◽  
Step Growth

scholarly journals Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique

2016 ◽  
Vol 124 (10) ◽  
pp. 1127-1131 ◽  
Author(s):  
Shinya KONDO ◽  
Tomoaki YAMADA ◽  
Masahito YOSHINO ◽  
Tadashi SHIOTA ◽  
Kazuo SHINOZAKI ◽  
...  
Keyword(s):  
Thin Films ◽  
Significant Suppression ◽  
Island Growth ◽  
Growth Technique ◽  
Step Growth

IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

2013 ◽  
Vol 102 (2) ◽  
pp. 022904 ◽  
Author(s):  
Ayan Roy Chaudhuri ◽  
A. Fissel ◽  
V. R. Archakam ◽  
H. J. Osten
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Nitrogen Doping

Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Akasaka ◽  
D. He ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
In Situ Observation ◽  
Layer By Layer ◽  
High Quality ◽  
Deposition Parameters ◽  
Columnar Grains ◽  
Step Growth

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

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