Employability Skills: Brush Up Your Electronics

2017 ◽  
Author(s):  
Clive W. Humphris

Employability Skills: Brush Up Your Electronics. A combined eBook and educational software package at a tiny fraction of the previously published price. Table of Contents (958 software topics):- Introduction, Electronics, Basic Electronics, DC Current Flow, Resistor Value Test, Simple DC Circuits, Types of Switching, Variable Voltages, Ohm's Law, DC Voltage, DC Current, Series/Parallel Resistors, AC Measurements, AC Voltage and Current, AC Theory, RCL Series Circuits, RCL Parallel Circuits, Capacitance, Capacitors, Inductance, Inductors, Impedance, Radio and Communication, Tuned Circuits, Attenuators, Passive Filters, Active Filters, Oscillators, Circuit Theorems, Complex Numbers, DC Power, AC Power, Silicon Controlled Rectifier, Power Supplies, Voltage Regulation, Magnetism, Electric Machines, Transformers, Three Phase Systems, Energy Transfer and Cost, Atomic Structures, Diode Theory, Diode Applications, Transistor Theory, Bipolar Transistor, Transistor Configurations, Active Transistor Circuits, Field Effect Transistors, Basic Operational Amplifier, Op-Amp Theory, Op-Amp Applications, Sum and Difference Amp, Analogue Multi-meter, Measurement, Component Testing, PIC Micro, PIC® Microcontroller, PIC® Architecture, PIC® Analogue to Digital, PIC® Byte Orientated Instructions, PIC® Bit Orientated Instructions, PIC® Literal and Control Instructions, Mechanics, Area, Surface Area and Symmetry, Volume, Compound Measures, Geometry, Motion, Machines, Optics, Computing, Hardware Devices, Data Structures, Data Files, Computer Systems, Data Handling, System Development, Computer Programming, Data Analysis, Binary Numbers, Binary Arithmetic, Digital, Logic Gates 1., Logic Gates 2., Logic Families, Flip Flops, Combinational Logic, Counters, Counting, Shift Registers, 555 Timer, Logic Interfacing, Boolean ...

2017 ◽  
Author(s):  
Clive W. Humphris

Employability Skills: Brush Up Your Mechanics. eBook covers all the topics of this popular software title used in schools and colleges worldwide for over twenty years. See Additional Notes for instructions to download the highly interactive PC and mobile apps. Accompanying Software Contents: (400 topics*). Introduction, Motion, Machines, Optics, Area, Surface Area and Symmetry, Volume, Compound Measures, Geometry, Angles and Parallels, Triangle Ratios, Triangle Angles, Ratios, Vectors, Circle Angles, Slope and Translation, Curves and Angle Conversion. * Mechanics topics will be found in the software title Electrical, Mechanics and Maths V10 Educational Software package. Introduction, Basic Electronics, Conductors and Insulators, Resistor Value Test, Simple DC Circuits, Types of Switching, Variable Voltages, Ohm's Law, DC Voltage, DC Current, Series/Parallel Resistors, AC Measurements, AC Voltage and Current, AC Theory, RCL Series Circuits, RCL Parallel Circuits, Capacitance, Capacitors, Inductance, Inductors, Impedance, Circuit Theorems, Complex Numbers, DC Power, AC Power, Silicon Controlled Rectifier, Power Supplies, Voltage Regulation, Magnetism, Electric Machines, Transformers, Three Phase Systems, Energy Transfer and Cost, Atomic Structures, Diode Theory, Diode Applications, Transistor Theory, Bipolar Transistor, Transistor Configurations, Active Transistor Circuits, Field Effect Transistors, Analogue Multi-meter, Component Testing. Mathematics. Number Systems, Number Conversion, Number Types, Compound Measures, Roots, Angles and Parallels, Triangle Ratios, Triangle Angles, Percentages, Ratios, Fractions, Vectors, Laws, Algebra 0., Algebra 1., Algebra 2., Mathematical Rules, Powers and Indices, Simplifying, Linear Equations, Graphing, Slope and Translation, Curves and Angle Conversion, Personal Finance, Data Analysis.


2017 ◽  
Author(s):  
Clive W. Humphris

Employability Skills: Brush Up Your Electrical eBook covers all the topics of this popular software title used in schools and colleges worldwide for over twenty years. See Additional Notes for instructions to download the highly interactive PC software. Chapters (550 software topics):- Introduction, Basic Electronics, Conductor And Insulator, Resistor Value Test, Simple Dc Circuits, Types Of Switching, Variable Voltages, Ohm's Law, DC Voltage, DC Current, Series and Parallel Resistors, AC Measurement, AC Voltage and Current, AC Theory, RCL Series, RCL Parallel, Capacitance, Capacitors, Inductance, Inductors, Impedance, Circuit Theorems, Complex Numbers, DC Power, AC Power, Silicon Controlled Rectifier, Power Supply, Voltage Regulation, Magnetism, Electrical Machines, Transformers, Three Phase Systems, Energy Transfer and Cost, Atomic Structures, Diode Theory, Diode Applications, Transistor Theory, Bipolar Transistors, Transistor Configurations, Active Transistor Circuits, Field Effect Transistors, Analogue Multi-Meter, Component Testing, Additional Notes.


2017 ◽  
Author(s):  
Clive W. Humphris

Employability Skills: Brush Up Your Computing. eBook covers all the topics of this popular software title used in schools and colleges worldwide for over twenty years. See Additional Notes for instructions to download the highly interactive PC software for your school. Used in thousands of schools and colleges worldwide the software is designed to work as a traditional textbook on your PC screen. A combined eBook and educational software package at a tiny fraction of the previously published price. Table of Contents (350 software topics) Introduction, Hardware Devices, Data Structures, Data Files, Computer Systems, Data Handling, System Development, Computer Programming, Binary Numbers, Binary Arithmetic, Logic Gates 1., Logic Gates 2., Logic Families, Flip Flops, Combinational Logic, Counters, Counting, Shift Registers, Logic Interfacing, Boolean and DeMorgan's, Micro-Computer, Data/Address Bus, Memory Addressing, Arithmetic and Logic Unit, Clock and Reset, Instructions and Control, Memory Cells, Microprocessor Memory, Addressing Modes, Instructions Set 1., Instructions Set 2., Instructions Set 3., Additional Notes.


2017 ◽  
Author(s):  
Clive W. Humphris

Employability Skills: Brush Up Your Business Studies eBook covers all the topics of this popular software title used in schools and colleges worldwide for over twenty years. See Additional Notes for instructions to download the highly interactive PC software. A combined eBook and educational software package at a tiny fraction of the previously published price. Table of Contents (280 software topics) Introduction, Accounting, Accounting Tools, Financial Accounts, Ratio Analysis, Workforce performance and Production, Personal Finance, Mathematics, Number Systems, Number Conversion, Number Types, Roots, Percentages, Ratios, Fractions, Vectors, Laws, Algebra 0., Algebra 1., Algebra 2., Mathematical Rules, Powers and Indices, Simplifying, Linear Equations, Graphing, Data Analysis, Computing, Hardware Devices, Data Structures, Data Files, Computer Systems , Data Handling, System Development, Computer Programming, Binary Numbers, Binary Arithmetic, Additional Notes.


2018 ◽  
Vol 17 (1) ◽  
Author(s):  
Md Ibnul Bin Kader Arnub ◽  
M Tanseer Ali

The double gate MOSFET, where two gates are fabricated along the length of the channel one after another. Design of logic gates is one of the most eminent application of Double Gate MOSFET. Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are shown to be promising for digital logic applications. This paper describes the design and analysis of different types of logic gates using GaN based DG-MOSFET. The gate length (LG) is kept constant at 10.6 nm. The gate voltage varies from 0 to 1 V for the device switching from turn OFF to turn ON-state. For the device with HfO2 as gate oxide, the ON-state current (ION) and OFF-state current (IOFF) are found 8.11×10-3 and 6.38605×10-9A/μm respectively. The leakage current is low for the device with HfO2 as compared to that for the device with ZrO2. The subthreshold swing (SS) is 68.7408 mV/dec for the device with HfO2.


2020 ◽  
Author(s):  
Akshay Wali ◽  
Andrew Arnold ◽  
Shamik Kundu ◽  
Soumyadeep Choudhury ◽  
Kanad Basu ◽  
...  

Abstract Reverse engineering (RE) is one of the major security threats to the semiconductor industry due to the involvement of untrustworthy parties in an increasingly globalized chip manufacturing supply chain [1-5]. RE efforts have already been successful in extracting device level functionalities from an integrated circuit (IC) with very limited resources [6]. Camouflaging is an obfuscation method that can thwart such RE [7-9]. Existing work on IC camouflaging primarily uses fabrication techniques such as doping and dummy contacts to hide the circuit structure or build cells that look alike but have different functionalities. While promising these Si complementary metal oxide semiconductor (CMOS) based obfuscation techniques adds significant area overhead and are successfully decamouflaged by the Satisfiability solver (SAT)-based reverse engineering techniques [9-13]. Emerging solutions, such as polymorphic gates based on giant spin Hall effect (GSHE) are promising but adds delay overhead in hybrid CMOS-GSHE designs restricting the camouflaging to a maximum of 15% of all the gates in the circuit. Here, we harness the unique properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) including MoS2, MoSe2, MoTe2, WS2, and WSe2 and their optically transparent transition metal oxides (TMOs) to demonstrate novel area efficient camouflaging solutions that are resilient to SAT-attack and automatic test pattern generation (ATPG) attacks. We show that resistors with resistance values differing by 8 orders of magnitude, diodes with variable turn-on voltages and reverse saturation currents, and field effect transistors (FETs) with adjustable conduction type, threshold voltages and switching characteristics can be optically camouflaged to look exactly similar by engineering TMO/TMD heterostructures allowing hardware obfuscation of both digital and analog circuits. Since this 2D heterostructure devices family is intrinsically camouflaged, NAND/NOR/AND/OR gates in the circuit can be obfuscated with significantly less area overhead allowing 100% logic obfuscation compared to only 5% for CMOS-based camouflaging. Finally, we demonstrate that the largest benchmarking circuit from ISCAS’85, comprised of more than 4000 logic gates when obfuscated with the CMOS-based technique are successfully decamouflaged by SAT-attack in less than 40 minutes; whereas, it renders to be invulnerable even in more than 10 hours, when camouflaged with 2D heterostructure devices thereby corroborating our hypothesis of high resilience against RE. Our approach of connecting unique material properties to innovative devices to secure circuits can be considered as one of its kind demonstrations, highlighting the benefits of cross-layer optimization.


2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940025
Author(s):  
H. Salama ◽  
B. Saman ◽  
R. H. Gudlavalleti ◽  
P-Y. Chan ◽  
R. Mays ◽  
...  

This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.


2015 ◽  
Vol 24 (03n04) ◽  
pp. 1550008 ◽  
Author(s):  
Bander Saman ◽  
P. Mirdha ◽  
M. Lingalugari ◽  
P. Gogna ◽  
F. C. Jain ◽  
...  

This paper presents the design and modeling of logic gates using two channel spatial wavefunction switched field-effect transistors (SWSFETs) it is also known as a twin-drain MOSFET. In SWSFETs, the channel between source and drain has two or more quantum wells (QWs) layers separated by a high band gap material between them. The gate voltage controls the charge carrier concentration in the two quantum wells layers and it causes the switching of charge carriers from one channel to other channel of the device. The first part of this paper shows the characteristics of n-channel SWSFET model, the second part provides the circuit topology for the SWSFET inverter and universal gates- NAND, AND, NOR,OR, XOR and XOR. The proposed model is based on integration between Berkeley Short-channel IGFET Model (BSIM) and Analog Behavioral Model (ABM), the model is suitable to investigate the gates configuration and transient analysis at circuit level. The results show that all basic two-input logic gates can be implanted by using n-channel SWSFET only, It covers less area compared with CMOS (Complementary metal–oxide–semiconductor) gates. The NAND-NOR can be performed by three SWSFET, moreover the exclusive-NOR “XNOR” can be done by four SWSFET transistors also AND, OR, XOR gates require two additional SWSFET for inverting.


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