Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

2011 ◽  
Vol 19 (9) ◽  
pp. 623 ◽  
Author(s):  
Ki-Su Keum ◽  
Kyoung-Min Lee ◽  
Jae-Dam Hwang ◽  
Kil-Sun No ◽  
Wan-Shick Hong
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Atomic Hydrogen ◽  
Gate Dielectric ◽  
Annealing Effect ◽  
Silicon Nitride Films

Low-temperature hydrolysis (oxidation) of plasma-deposited silicon nitride films

1989 ◽  
Vol 1 (2) ◽  
pp. 194-198 ◽  
Author(s):  
J. N. Chiang ◽  
S. G. Ghanayem ◽  
D. W. Hess
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Nitride Films

Spectrometric analysis of silicon nitride films deposited by low-temperature liquid-source CVD

2019 ◽  
Vol 126 (13) ◽  
pp. 133101 ◽  
Author(s):  
R. Kou ◽  
N. Yamamoto ◽  
G. Fujii ◽  
T. Aihara ◽  
T. Tsuchizawa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Spectrometric Analysis ◽  
Silicon Nitride Films ◽  
Liquid Source ◽  
Temperature Liquid

Low Temperature Remote Plasma Assisted Jet Vapor Deposition of Silicon Nitride

1997 ◽  
Vol 495 ◽  
Author(s):  
J. Veteran ◽  
C. Hobbs ◽  
R. Hegde ◽  
P. Tobin ◽  
V. Wang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Microwave Cavity ◽  
Promising Technique ◽  
Thermal Budget ◽  
Silicon Nitride Films ◽  
Jet Vapor Deposition ◽  
Process Gases

ABSTRACTAs MOSFET dimensions are aggressively scaled, minimizing the thermal budget becomes critical for limiting the diffusion of channel profiles. Unfortunately, high quality dielectrics with low deposition temperatures have not been readily available. Typical room temperature dielectrics are porous and electrically leaky. A promising technique for low temperature dielectric deposition is Jet Vapor Deposition (JVD). [1] Two coaxial quartz nozzles spray the process gases to the substrate surface at super-sonic speeds while a microwave cavity generates a plasma in the nozzle. [2] We have successfully deposited silicon nitride films using SiH4/He and N2/He gas mixtures. These are the first reported JVD results on 200 mm wafers.

Dielectric performance of low temperature silicon nitride films in a-Si:H TFTs

2002 ◽  
Vol 299-302 ◽  
pp. 1360-1364 ◽  
Author(s):  
Andrei Sazonov ◽  
Denis Stryahilev ◽  
Arokia Nathan ◽  
Lydia D Bogomolova
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Nitride Films ◽  
Dielectric Performance
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