P-105: Advanced Furnace-Growing Technology to Fabricate Nanowire Type In2O3 Film on Gallium Nitride LEDs

2011 ◽  
Vol 42 (1) ◽  
pp. 1498-1500
Author(s):  
Jan-Tian Lian ◽  
Kai-Chieh Tsao ◽  
Yu-Ming Chang ◽  
Chun-Wei Su ◽  
Jhao-Ming Zeng ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
In2o3 Film

P-81 : Two Zones Method of Furnace-Growing Technology to Control Grain Size of In2O3 Film on Gallium Nitride LED

2010 ◽  
Vol 41 (1) ◽  
pp. 1552 ◽  
Author(s):  
Jan-Tian Lian ◽  
Kai-Chieh Tsao ◽  
Chun-Wei Su ◽  
Chin-I Chiang ◽  
Tzung-Yang Li ◽  
...  
Keyword(s):  
Grain Size ◽  
Gallium Nitride ◽  
In2o3 Film

ИССЛЕДОВАНИЕ НИТРИД-ГАЛЛИЕВЫХ МАЛОШУМЯЩИХ УСИЛИТЕЛЕЙ ПРИ КРИОГЕННЫХ ТЕМПЕРАТУРАХ

2020 ◽  
Vol 96 (3s) ◽  
pp. 347-352
Author(s):  
Д.Г. Алипа ◽  
В.В. Краснов ◽  
В.М. Минненбаев ◽  
А.В. Редька ◽  
Ю.В. Федоров
Keyword(s):  
Remote Sensing ◽  
Gallium Nitride ◽  
Millimeter Wave ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Cryogenic Temperatures ◽  
Space Systems ◽  
Earth Remote Sensing ◽  
Hydrogen Level

В статье представлены результаты исследования возможности применения при криогенных температурах водородного уровня дискретных приборов и монолитных схем на основе нитрида галлия в составе малошумящих усилителей сантиметрового и миллиметрового диапазона длин волн для приемных устройств систем дистанционного зондирования Земли из космоса и в составе криогенных комплексов наблюдения космического пространства. The article presents the results of the research on the possibility of using discrete devices and gallium nitride monolithic circuits at the cryogenic temperatures of hydrogen level as part of low-noise amplifiers of centimeter and millimeter-wave bands used in receivers of Earth remote sensing space systems and in cryogenic systems for space observation.

Powerful Gallium Nitride Microwave Transistors on Silicon Substrates

2020 ◽  
Vol 15 (2) ◽  
pp. 169-174
Author(s):  
Yu. V. Khrapovitskaya ◽  
M. Y. Chernykh ◽  
I. S. Ezubchenko ◽  
Yu. V. Grishchenko ◽  
I. O. Mayboroda ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Silicon Substrates ◽  
Microwave Transistors

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

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