Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocompositesvia Transamination of M(NMe2)32, M = Al, Al/Ga (1/1).

1998 ◽  
Author(s):  
J. F. Janik ◽  
R. L. Wells ◽  
J. L. Coffer ◽  
J. V. St John ◽  
W. T. Pennington
Keyword(s):  
Gallium Nitride ◽  
Aluminum Nitride ◽  
Aluminum Gallium Nitride ◽  
Nanocrystalline Aluminum

Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocomposites via Transamination of [M(NMe2)3]2, M = Al, Al/Ga (1/1)

1998 ◽  
Vol 10 (6) ◽  
pp. 1613-1622 ◽  
Author(s):  
Jerzy F. Janik ◽  
Richard L. Wells ◽  
Jeffery L. Coffer ◽  
John V. St. John ◽  
William T. Pennington ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Nitride ◽  
Aluminum Gallium Nitride ◽  
Nanocrystalline Aluminum

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

2013 ◽  
Author(s):  
Iskander G. Batyrev ◽  
Chi-Chin Wu ◽  
Peter W. Chung ◽  
N. S. Weingarten ◽  
Kenneth A. Jones
Keyword(s):  
Gallium Nitride ◽  
Aluminum Nitride ◽  
Aluminum Gallium Nitride

scholarly journals Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

1997 ◽  
Vol 71 (16) ◽  
pp. 2289-2291 ◽  
Author(s):  
A. T. Sowers ◽  
J. A. Christman ◽  
M. D. Bremser ◽  
B. L. Ward ◽  
R. F. Davis ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Aluminum Nitride ◽  
Aluminum Gallium Nitride ◽  
Cold Cathode

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

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