РЕЗУЛЬТАТЫ ПРИМЕНЕНИЯ ОТЕЧЕСТВЕННОГО ОБОРУДОВАНИЯ ДЛЯ РЕАЛИЗАЦИИ КЛЮЧЕВЫХ ТЕХНОЛОГИЧЕСКИХ ОПЕРАЦИЙ ПРИ ИЗГОТОВЛЕНИИ СВЧ ЭКБ НА ОСНОВЕ GAN И GAAS

Показаны результаты применения отечественного оборудования (ЗАО «НТО») для разработки и проведения ключевых технологических операций при изготовлении мощных полевых транзисторов и МИС СВЧ-диапазона на основе GaN и GaAs. Обсуждаются особенности и результаты оптимизации технологических установок для таких операций, как выращивание гетероструктур методом МЛЭ, нанесение контактной и затворной металлизации при помощи электронно-лучевого напыления, отжиг омических контактов, травление меза-изоляции и нанесение диэлектрика при помощи плазмохимических методов. Кроме того, представлены особенности установок и технологических процессов глубокого плазмохимического травления для формирования сквозных металлизированных отверстий в SiC и GaAs, а также прецизионного травления GaN и GaAs. Продемонстрированы технологические результаты использования оборудования ЗАО «НТО» в производственном цикле АО «Светлана-Рост». The paper highlights the results of using domestic equipment (SemiTEq JSC) for the development and implementation of key technological operations for producing GaN and GaAs based power microwave transistors. Features and results of optimization of the technological equipment have also been discussed for such operations as: MBE growth of heterosructures, deposition of the contacts and gate metallization using electron beam evaporation and ohmic contacts annealing, plasma etching of mesa isolation and PECVD of the dielectric. In addition, the features of systems for deep plasma etching of SiC and GaAs as well as GaN and GaAs precision etching have been presented. The technological results of using SemiTEq equipment in the production cycle of Svetlana-Rost JSC have been demonstrated.

Peculiarities of the method in internal formation of structures in bipolar and CMOS technologies

The possibility of creating silicon bipolar high-power microwave transistors by the method of ion doping of monosilicon with B + ions through a layer of SiO2 and emitter windows in it with the subsequent introduction of P + ions into them and annealing in argon is shown. The developed process reduces the labor intensity of manufacturing and improves the frequency and power characteristics of transistors: increasing the cut-off frequency (collector current = 1.5 A) from 1.8 to 2.1 GHz and from 1.5 to 1.9 GHz (collector current = 2,8 A), output power from 20 to 21.3 W, power gain from 2.5 to 2.7, collector efficiency from 60 to 79.8 %. The formation of pockets of n- and p- type CMOS structures was considered using a mask of thermal SiO2 without a layer of Si3N4. The developed process reduces the labor intensity of manufacturing by ~ 21.5 % and increases the yield of CMOS microcircuit structures by ~ 4.5 %, thanks to a decrease in the residual stresses in monosilicon and the improvement of pocket doping methods.

Fuzzy Logic based Method for the Extraction of Extrinsic and Intrinsic Elements of Microwave Transistors

In this paper we propose a new method for the extraction of extrinsic and intrinsic elements for microwave transistors based on a fuzzy logic architecture. The proposed technique uses the experience of the designer in order to extract and optimize in a smart way only the electrical elements required for an accurate multibias scattering parameters prediction. We tested our model with a GaAs MESFET 6 x 120 um and a Al GaAs P-HEMT 6 x 15 um device. It has been demonstrated that the proposed method is more accurate than the conventional one, evaluated with the previous technologies. The global behavior of the transconductance (gm) and gate to source capacitance (Cgs) measured with this technique agrees with the physical properties of the above mentioned technologies. Another advantage of this method is that the conventional “Cold-FET” configurations (Vds=0V) are not required, which warrant the reliability of the microwave transistor. The methodology presented in this work can be used in the RF circuit design industry as a first step for an accurate transistor characterization.

Influence of technological factors on the characteristics of ohmic contacts of powerful AlGaN/GaN/SiC HEMT

In this paper are considers the effect of the microrelief, dislocation structure and other defects of the epitaxial layers of the source and drain regions of the nitride HEMT transistors on the parameters of the formed ohmic contacts. The studies were carried out directly on high−power microwave transistors made of GaN/AlGaN/GaN/SiC heterostructures. Ohmic burning contacts were formed using the compositions Ti—Al—Mo—Au and Ti—Al—Ni—Au. To estimation the structural features of the contact areas, the surface microrelief at the interface of the burned contact/AlGaN and the defects formed on its surface was studied. It is shown that the resistance of the source and drain regions is largely determined by the surface microstructure at the boundary. Experimentally shown is the formation of a conducting layer in AlGaN under the ohmic contacts. The possibility of the formation of a new type of structural defects with a high aspect ratio in the contact and active areas of the devices during the formation of ohmic burned contacts is demonstrated. It is shown that the appearance of high densities of such defects leads to an increase of the device leakage currents.