scholarly journals P-13: Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays

2008 ◽  
Vol 39 (1) ◽  
pp. 1215 ◽  
Author(s):  
Chiao-Shun Chuang ◽  
Tze-Ching Fung ◽  
Barry G. Mullins ◽  
Kenji Nomura ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Flat Panel Displays ◽  
Flat Panel ◽  
Active Matrix

A small area 10-bit linear gamma DAC with voltage adder for large-sized active matrix flat panel displays

2014 ◽  
Author(s):  
Jae-Yoon Bae ◽  
Hyeon-Cheon Seol ◽  
Young-Cheon Kwon ◽  
Seong-Kwan Hong ◽  
Oh-Kyong Kwon ◽  
...  
Keyword(s):  
Small Area ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Active Matrix

Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers

Nanoscale ◽  
2018 ◽  
Vol 10 (31) ◽  
pp. 14819-14823
Author(s):  
Su Hyoung Kang ◽  
Sangmin Kang ◽  
Seong Chae Park ◽  
Jong Bo Park ◽  
Youngjin Jung ◽  
...  
Keyword(s):  
Thin Film Transistors ◽  
Large Scale ◽  
Diffusion Barriers ◽  
Indium Gallium Zinc Oxide ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Active Matrix ◽  
Solid Diffusion ◽  
Indium Gallium ◽  
Free Growth

Amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) have been under intense investigation as one of the promising candidates for active matrix flat-panel displays.

Attempts to Apply Thin Film Transistors to Electroluminescent Displays

1984 ◽  
Vol 33 ◽  
Author(s):  
M. Robert Miller
Keyword(s):  
Thin Film ◽  
Problem Solving ◽  
Thin Film Transistors ◽  
Flat Panel Displays ◽  
Huge Amount ◽  
Flat Panel ◽  
Active Matrix ◽  
Display Devices ◽  
The Subject ◽  
Problem Solving Process

ABSTRACTThe objectives of the two programs described here were to develop fabrication processes for flat panel displays using an active matrix of thin film transistors (TFT) behind an electroluminescent (EL) display medium. The programs were carried out under ERADCOM contracts DAAB07-76-C-0027 with Westinghouse R&D Center and DAAB-07-77-C-0583 with Aerojet Electrosystems Company. The huge amount of information about the processes and technology generated through the efforts of capable and dedicated people who worked on these programs was, in spite of everything, not enough to achieve the stated objectives. The fabrication processes developed did not result in repeatable, reliable display devices. The solutions applied to one set of problems tended to uncover new problems previously unseen, but this continual problem solving process probably generated more information about the technology than results from many programs in which the goals are achieved. The improved understanding of TFT processes and applicability is the subject of this report.

Amorphous Silicon Alloy Technology For Active Matrix Displays

1986 ◽  
Vol 70 ◽  
Author(s):  
Z. Yaniv ◽  
V. Cannella ◽  
Y. Baron ◽  
A. Lien ◽  
J. McGill
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Gate Dielectric ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel ◽  
High Quality ◽  
Active Matrix ◽  
Silicon Alloy ◽  
Metal Insulator Metal

ABSTRACTThin film semiconductor devices have been investigated over the past twenty years for application in large area flat panel displays. The development of thin film transistors and diodes based on amorphous silicon (a-Si) alloy materials has made the application of these devices, to display technologies, very attractive. More recently, manufacturing techniques to produce high quality large area films of amorphous silicon alloys have been demonstrated for photovoltaic applications.Most of the current research and development effort on active matrix liquid crystal displays (LCDs) has concentrated on a-Si alloy TFTs. The success of TFT based displays for large area flat panel displays has been limited so far, mainly due to the difficulty of obtaining a high quality gate dielectric by plasma deposition and due to the presence of crossing conductors on the same substrate, both increasing the probability of defects in the display. When a two terminal sandwich device is used, on the other hand, no gate dielectric is required, hence, a higher yield can be expected. Metal-insulator-metal and hydrogenated amorphous silicon alloy devices have been proposed for incorporation in LCDs. Performance requirements for a useful active matrix switching element and a comparison among the different a-Si alloy thin film devices used for this purpose will be reviewed.

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