Proceedings. IEEE International SOI Conference
Latest Publications

TOTAL DOCUMENTS

65

(FIVE YEARS 0)

H-INDEX

7

(FIVE YEARS 0)

Published By IEEE

0780324072

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Buried oxide leakage in low dose SIMOX materials

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514256 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Nakajima ◽

T. Yano ◽

I. Hamaguchi ◽

M. Tachimori ◽

T. Fujita

Keyword(s):

Low Dose ◽

Buried Oxide

Download Full-text

High performance submicron SOI devices with silicon film thickness below 50 nm

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514232 ◽

2002 ◽

Cited By ~ 3

Author(s):

C. Raynaud ◽

O. Faynot ◽

B. Giffard ◽

J. Gautier

Keyword(s):

Film Thickness ◽

High Performance ◽

Silicon Film ◽

Soi Devices

Download Full-text

Surface quality of plasma-thinned bonded SOI wafers

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514254 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Feng ◽

M. Matloubian ◽

G.J. Gardopee ◽

D.P. Mathur

Keyword(s):

Surface Quality

Download Full-text

Unified submicrometer SOI/MOSFET model for circuit simulation

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514204 ◽

2002 ◽

Cited By ~ 3

Author(s):

Yuhua Cheng ◽

T.A. Fjeldly

Keyword(s):

Circuit Simulation ◽

Soi Mosfet

Download Full-text

Effect of anneal temperature on Si/buried oxide interface roughness of SIMOX

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514229 ◽

2002 ◽

Cited By ~ 3

Author(s):

C. Jacobs ◽

A. Genis ◽

L.P. Allen ◽

P. Roitman

Keyword(s):

Interface Roughness ◽

Oxide Interface ◽

Buried Oxide ◽

Anneal Temperature

Download Full-text

Parameter characterization of double gate ultra-thin SOI MOSFET

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514220 ◽

2002 ◽

Author(s):

Jyi-Tsong Lin

Keyword(s):

Double Gate ◽

Soi Mosfet

Download Full-text

Hole density modeling of SiGe channel fully depleted SOI P-MOSFET

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514218 ◽

2002 ◽

Author(s):

G.F. Niu ◽

G. Ruan ◽

Y.P. Huang

Keyword(s):

Hole Density ◽

Fully Depleted ◽

Density Modeling

Download Full-text

Speed, power, and yield comparison of thin bonded SOI versus bulk CMOS technologies

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514225 ◽

2002 ◽

Cited By ~ 4

Author(s):

E.D. Nowak ◽

L. Ding ◽

Y.T. Loh ◽

C. Hu

Download Full-text

Investigation of body effect of fully depleted n channel SOI device as a function of body bias

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514233 ◽

2002 ◽

Cited By ~ 2

Author(s):

Zongjian Chen ◽

E.V. Ploeg ◽

J. Shott ◽

J.D. Plummer

Keyword(s):

Body Effect ◽

Fully Depleted ◽

Body Bias

Download Full-text

Generation and annihilation of interface states under alternate hot electron/hole injection in SOI MOSFET's

Proceedings. IEEE International SOI Conference ◽

10.1109/soi.1994.514277 ◽

2002 ◽

Cited By ~ 2

Author(s):

S.P. Sinha ◽

A. Zaleski ◽

D.E. Ioannou ◽

G.J. Campisi ◽

H.L. Hughes

Keyword(s):

Interface States ◽

Hole Injection ◽

Hot Electron ◽

Electron Hole

Download Full-text