8.1:Invited Paper: Advancements and Outlook of High Performance Active-Matrix OLED Displays

2007 ◽  
Vol 38 (1) ◽  
pp. 84-88 ◽  
Author(s):  
Takatoshi Tsujimura ◽  
Wei Zhu ◽  
Seiichi Mizukoshi ◽  
Nobuyuki Mori ◽  
Koichi Miwa ◽  
...  
Keyword(s):  
High Performance ◽  
Active Matrix

Skin‐Inspired High‐Performance Active‐matrix Circuitry for Multimodal User‐Interaction

2021 ◽  
pp. 2105480
Author(s):  
Jing Zhao ◽  
Zheng Wei ◽  
Zhongyi Li ◽  
Jinran Yu ◽  
Jian Tang ◽  
...  
Keyword(s):  
High Performance ◽  
User Interaction ◽  
Active Matrix

47.1: High Performance Plastic Substrates for Active Matrix Flexible FPD

2003 ◽  
Vol 34 (1) ◽  
pp. 1325 ◽  
Author(s):  
Simone Angiolini ◽  
Mauro Avidano ◽  
Roberto Bracco ◽  
Carlo Barlocco ◽  
Nigel D. Young ◽  
...  
Keyword(s):  
High Performance ◽  
Active Matrix ◽  
Plastic Substrates

scholarly journals Fully rubbery integrated electronics from high effective mobility intrinsically stretchable semiconductors

2019 ◽  
Vol 5 (2) ◽  
pp. eaav5749 ◽  
Author(s):  
Kyoseung Sim ◽  
Zhoulyu Rao ◽  
Hae-Jin Kim ◽  
Anish Thukral ◽  
Hyunseok Shim ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Transport ◽  
Electronic Materials ◽  
High Mobility ◽  
Logic Gates ◽  
Stretchable Electronics ◽  
Active Matrix ◽  
Integrated Electronics ◽  
Transport Distance ◽  
Effective Mobility

An intrinsically stretchable rubbery semiconductor with high mobility is critical to the realization of high-performance stretchable electronics and integrated devices for many applications where large mechanical deformation or stretching is involved. Here, we report fully rubbery integrated electronics from a rubbery semiconductor with a high effective mobility, obtained by introducing metallic carbon nanotubes into a rubbery semiconductor composite. This enhancement in effective carrier mobility is enabled by providing fast paths and, therefore, a shortened carrier transport distance. Transistors and their arrays fully based on intrinsically stretchable electronic materials were developed, and they retained electrical performances without substantial loss when subjected to 50% stretching. Fully rubbery integrated electronics and logic gates were developed, and they also functioned reliably upon mechanical stretching. A rubbery active matrix based elastic tactile sensing skin to map physical touch was demonstrated to illustrate one of the applications.

scholarly journals High performance organic transistor active-matrix driver developed on paper substrate

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Boyu Peng ◽  
Xiaochen Ren ◽  
Zongrong Wang ◽  
Xinyu Wang ◽  
Robert C. Roberts ◽  
...  
Keyword(s):  
High Performance ◽  
Paper Substrate ◽  
Active Matrix ◽  
Organic Transistor

Development of High-Performance Organic Thin-Film Transistors for Large-Area Displays

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 455-459 ◽  
Author(s):  
Sangyun Lee ◽  
Bonwon Koo ◽  
Jae-Geun Park ◽  
Hyunsik Moon ◽  
Jungseok Hahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
High Performance ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Processing Temperature ◽  
Organic Thin Film ◽  
Large Area ◽  
Active Matrix

AbstractOrganic thin-film transistors (OTFTs) are considered indispensable in applications requiring flexibility, large area, low processing temperature, and low cost. Key challenges to be addressed include developing solution-processable gate dielectric materials that form uniform films over large areas and exhibit excellent insulating properties, reducing contact resistance at interfaces between organic semiconductors and electrodes, and optimizing the patterning of organic semiconductors. High-performance pentacene-based OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes. Using such OTFT backplates, a 15-in. 1024 X 768 pixel full-color active-matrix liquid-crystal display (AMLCD) and a 4.5-in. 192 X64 pixel active-matrix organic light-emitting diode (AMOLED) have been fabricated.

scholarly journals TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor

2020 ◽  
Vol 63 (2) ◽  
pp. 89-93
Author(s):  
Hadjira Tayoub ◽  
Baya Zebentouta ◽  
Zineb Benamara
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Large Scale ◽  
Light Emitting Diode ◽  
Physical Parameters ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Transfer Characteristics ◽  
The Impact

   Low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) have been studied because of their high performance in Active Matrix Liquid Crystal Displays (AMLCD's) and Active Matrix Organic Light-Emitting Diode (AMOLED) applications. The purpose of this work is to simulate the impact of varying the electrical and physical parameters (the interface states, active layer's thickness and BBT model) in the transfer characteristics of poly-Si TFT to extract the electrical parameters like the threshold voltage, the mobility and to evaluate the device performance. The device was simulated using ATLAS software from Silvaco, the results show that the electrical and physical parameters of poly-Si TFT affect significantly its transfer characteristics, choosing suitable parameters improve high-performance transistor. Such results make the designed structure a promising element for large-scale electronics applications.      

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