47.1: High Performance Plastic Substrates for Active Matrix Flexible FPD

2003 ◽  
Vol 34 (1) ◽  
pp. 1325 ◽  
Author(s):  
Simone Angiolini ◽  
Mauro Avidano ◽  
Roberto Bracco ◽  
Carlo Barlocco ◽  
Nigel D. Young ◽  
...  
Keyword(s):  
High Performance ◽  
Active Matrix ◽  
Plastic Substrates

Skin‐Inspired High‐Performance Active‐matrix Circuitry for Multimodal User‐Interaction

2021 ◽  
pp. 2105480
Author(s):  
Jing Zhao ◽  
Zheng Wei ◽  
Zhongyi Li ◽  
Jinran Yu ◽  
Jian Tang ◽  
...  
Keyword(s):  
High Performance ◽  
User Interaction ◽  
Active Matrix

Flexible silicon nanowires sensor for acetone detection on plastic substrates

2021 ◽  
Author(s):  
Kuibo Lan ◽  
Zhi Wang ◽  
Xiaodong Yang ◽  
Junqing Wei ◽  
Yuxiang Qin ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
High Performance ◽  
Underlying Mechanism ◽  
Environmental Safety ◽  
Cmos Process ◽  
Plastic Substrates ◽  
Irregular Shapes ◽  
Good Potential ◽  
Mechanical Bending ◽  
Acetone Detection

Abstract Acetone commonly exists in daily life and is harmful to human health, therefore the convenient and sensitive monitoring of acetone is highly desired. In addition, flexible sensors have the advantages of light-weight, conformal attachable to irregular shapes, etc. In this study, we fabricated high performance flexible silicon nanowires (SiNWs) sensor for acetone detection by transferring the monocrystalline Si film and metal-assisted chemical etching method on polyethylene terephthalate (PET). The SiNWs sensor enabled detection of gaseous acetone with a concentration as low as 0.1 parts per million (ppm) at flat and bending states. The flexible SiNWs sensor was compatible with the CMOS process and exhibited good sensitivity, selectivity and repeatability for acetone detection at room temperature. The flexible sensor showed performance improvement under mechanical bending condition and the underlying mechanism was discussed. The results demonstrated the good potential of the flexible SiNWs sensor for the applications of wearable devices in environmental safety, food quality, and healthcare.

A printable form of silicon for high performance thin film transistors on plastic substrates

2004 ◽  
Vol 84 (26) ◽  
pp. 5398-5400 ◽  
Author(s):  
E. Menard ◽  
K. J. Lee ◽  
D.-Y. Khang ◽  
R. G. Nuzzo ◽  
J. A. Rogers
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Plastic Substrates

All-Printed Carbon Nanotube finFETs on Plastic Substrates for High-Performance Flexible Electronics

2011 ◽  
Vol 24 (3) ◽  
pp. 358-361 ◽  
Author(s):  
Jingsheng Shi ◽  
Chun Xian Guo ◽  
Mary B. Chan-Park ◽  
Chang Ming Li
Keyword(s):  
Carbon Nanotube ◽  
Flexible Electronics ◽  
High Performance ◽  
Plastic Substrates

8.1:Invited Paper: Advancements and Outlook of High Performance Active-Matrix OLED Displays

2007 ◽  
Vol 38 (1) ◽  
pp. 84-88 ◽  
Author(s):  
Takatoshi Tsujimura ◽  
Wei Zhu ◽  
Seiichi Mizukoshi ◽  
Nobuyuki Mori ◽  
Koichi Miwa ◽  
...  
Keyword(s):  
High Performance ◽  
Active Matrix

Monocrystalline Si Films from Transfer Processes for Thin Film Devices

2001 ◽  
Vol 685 ◽  
Author(s):  
Ralf B. Bergmann ◽  
Christopher Berge ◽  
Titus J. Rinke ◽  
Jürgen H. Werner
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Silicon On Insulator ◽  
Active Matrix ◽  
Plastic Substrates ◽  
Light Point ◽  
Single Host ◽  
Active Matrix Displays ◽  
Si Films

AbstractThe transfer of thin monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of monocrystalline Si films on foreign substrates based on the formation ofquasi-monocrystallineSi-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.

High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process

2007 ◽  
Vol 989 ◽  
Author(s):  
Kyung Ho Kim ◽  
Yuriy Vygranenko ◽  
Mark Bedzyk ◽  
Jeff Hsin Chang ◽  
Tsu Chiang Chuang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
High Performance ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Plastic Substrate ◽  
Process Conditions ◽  
Plastic Substrates ◽  
Hydrogenated Amorphous

AbstractWe report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ~1.73 eV and low density of states (of the order 1015 cm-3). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ~70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ~10-11 and below 10-10 A/cm2, respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.

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