scholarly journals Fully rubbery integrated electronics from high effective mobility intrinsically stretchable semiconductors

2019 ◽  
Vol 5 (2) ◽  
pp. eaav5749 ◽  
Author(s):  
Kyoseung Sim ◽  
Zhoulyu Rao ◽  
Hae-Jin Kim ◽  
Anish Thukral ◽  
Hyunseok Shim ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Transport ◽  
Electronic Materials ◽  
High Mobility ◽  
Logic Gates ◽  
Stretchable Electronics ◽  
Active Matrix ◽  
Integrated Electronics ◽  
Transport Distance ◽  
Effective Mobility

An intrinsically stretchable rubbery semiconductor with high mobility is critical to the realization of high-performance stretchable electronics and integrated devices for many applications where large mechanical deformation or stretching is involved. Here, we report fully rubbery integrated electronics from a rubbery semiconductor with a high effective mobility, obtained by introducing metallic carbon nanotubes into a rubbery semiconductor composite. This enhancement in effective carrier mobility is enabled by providing fast paths and, therefore, a shortened carrier transport distance. Transistors and their arrays fully based on intrinsically stretchable electronic materials were developed, and they retained electrical performances without substantial loss when subjected to 50% stretching. Fully rubbery integrated electronics and logic gates were developed, and they also functioned reliably upon mechanical stretching. A rubbery active matrix based elastic tactile sensing skin to map physical touch was demonstrated to illustrate one of the applications.

scholarly journals Air/water interfacial assembled rubbery semiconducting nanofilm for fully rubbery integrated electronics

2020 ◽  
Vol 6 (38) ◽  
pp. eabb3656 ◽  
Author(s):  
Ying-Shi Guan ◽  
Anish Thukral ◽  
Shun Zhang ◽  
Kyoseung Sim ◽  
Xu Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Logic Gates ◽  
Robotic Hand ◽  
Interfacial Assembly ◽  
Active Matrix ◽  
Integrated Electronics ◽  
Spatiotemporal Mapping ◽  
Assembly Method ◽  
High Carrier Mobility ◽  
Structural Levels

A rubber-like stretchable semiconductor with high carrier mobility is the most important yet challenging material for constructing rubbery electronics and circuits with mechanical softness and stretchability at both microscopic (material) and macroscopic (structural) levels for many emerging applications. However, the development of such a rubbery semiconductor is still nascent. Here, we report the scalable manufacturing of high-performance stretchable semiconducting nanofilms and the development of fully rubbery transistors, integrated electronics, and functional devices. The rubbery semiconductor is assembled into a freestanding binary-phased composite nanofilm based on the air/water interfacial assembly method. Fully rubbery transistors and integrated electronics, including logic gates and an active matrix, were developed, and their electrical performances were retained even when stretched by 50%. An elastic smart skin for multiplexed spatiotemporal mapping of physical pressing and a medical robotic hand equipped with rubbery multifunctional electronic skin was developed to show the applications of fully rubbery-integrated functional devices.

CHASSIS DESIGN & PERFORMANCE ANALYSIS FOR THE EUROPEAN EXOMARS ROVER

2005 ◽  
Vol 29 (4) ◽  
pp. 507-517
Author(s):  
Alex Ellery ◽  
Lutz Richter ◽  
Reinhold Bertrand
Keyword(s):  
Performance Analysis ◽  
Weight Distribution ◽  
High Performance ◽  
High Mobility ◽  
Scientific Instrument ◽  
Equal Weight ◽  
Scientific Instruments ◽  
Design Issues ◽  
Martian Surface ◽  
Considerable Size

The European Space Agency’s (ESA) ExoMars rover has recently been subject to a Phase A study led by EADS Astrium, UK. This rover mission represents a highly ambitious venture in that the rover is of considerable size ~200+kg with high mobility carrying a highly complex scientific instrument suite (Pasteur) of up to 40 kg in mass devoted to exobiological investigation of the Martian surface and sub-surface. The chassis design has been a particular challenge given the inhospitable terrain on Mars and the need to traverse such terrain robustly in order to deliver the scientific instruments to science targets of exobiological interest, We present some of the results and design issues encountered during the Phase A study related to the chassis. In particular, we have focussed on the overall tractive performance of a number of candidate chassis designs and selected the RCL (Science & Technology Rover Company Ltd in Russian) concept C design as the baseline option in terms of high performance with minimal mechanical complexity overhead. This design is a six-wheeled double-rocker bogie design to provide springless suspension and maintain approximately equal weight distribution across each wheel.

scholarly journals Digital logic gates in soft, conductive mechanical metamaterials

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Charles El Helou ◽  
Philip R. Buskohl ◽  
Christopher E. Tabor ◽  
Ryan L. Harne
Keyword(s):  
Integrated Circuits ◽  
Electronic Materials ◽  
Polymer Networks ◽  
Conductive Polymer ◽  
Network Connectivity ◽  
Logic Gates ◽  
Boolean Logic ◽  
Digital Logic ◽  
Mechanical Metamaterials ◽  
Logic Operations

AbstractIntegrated circuits utilize networked logic gates to compute Boolean logic operations that are the foundation of modern computation and electronics. With the emergence of flexible electronic materials and devices, an opportunity exists to formulate digital logic from compliant, conductive materials. Here, we introduce a general method of leveraging cellular, mechanical metamaterials composed of conductive polymers to realize all digital logic gates and gate assemblies. We establish a method for applying conductive polymer networks to metamaterial constituents and correlate mechanical buckling modes with network connectivity. With this foundation, each of the conventional logic gates is realized in an equivalent mechanical metamaterial, leading to soft, conductive matter that thinks about applied mechanical stress. These findings may advance the growing fields of soft robotics and smart mechanical matter, and may be leveraged across length scales and physics.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals Iodine reduction for reproducible and high-performance perovskite solar cells and modules

2021 ◽  
Vol 7 (10) ◽  
pp. eabe8130
Author(s):  
Shangshang Chen ◽  
Xun Xiao ◽  
Hangyu Gu ◽  
Jinsong Huang
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
High Efficiency ◽  
Electronic Materials ◽  
Substantial Reduction ◽  
Perovskite Solar Cells ◽  
High Yield ◽  
Operation Conditions ◽  
Record Value ◽  
Precursor Powders

Perovskite-based electronic materials and devices such as perovskite solar cells (PSCs) have notoriously bad reproducibility, which greatly impedes both fundamental understanding of their intrinsic properties and real-world applications. Here, we report that organic iodide perovskite precursors can be oxidized to I2 even for carefully sealed precursor powders or solutions, which markedly deteriorates the performance and reproducibility of PSCs. Adding benzylhydrazine hydrochloride (BHC) as a reductant into degraded precursor solutions can effectively reduce the detrimental I2 back to I−, accompanied by a substantial reduction of I3−-induced charge traps in the films. BHC residuals in perovskite films further stabilize the PSCs under operation conditions. BHC improves the stabilized efficiency of the blade-coated p-i-n structure PSCs to a record value of 23.2% (22.62 ± 0.40% certified by National Renewable Energy Laboratory), and the high-efficiency devices have a very high yield. A stabilized aperture efficiency of 18.2% is also achieved on a 35.8-cm2 mini-module.

Skin‐Inspired High‐Performance Active‐matrix Circuitry for Multimodal User‐Interaction

2021 ◽  
pp. 2105480
Author(s):  
Jing Zhao ◽  
Zheng Wei ◽  
Zhongyi Li ◽  
Jinran Yu ◽  
Jian Tang ◽  
...  
Keyword(s):  
High Performance ◽  
User Interaction ◽  
Active Matrix

Quaternisation-polymerized N-type polyelectrolytes: synthesis, characterisation and application in high-performance polymer solar cells

2017 ◽  
Vol 4 (1) ◽  
pp. 88-97 ◽  
Author(s):  
Zhicheng Hu ◽  
Rongguo Xu ◽  
Sheng Dong ◽  
Kai Lin ◽  
Jinju Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Polymer Solar Cells ◽  
High Mobility ◽  
High Performance Polymer

We design and synthesize a series of high-mobility n-type polyelectrolytes with different anions via quaternisation polymerisation, which can be utilized as thickness-insensitive electron-transporting materials for polymer solar cells.

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