All-Printed Carbon Nanotube finFETs on Plastic Substrates for High-Performance Flexible Electronics

2011 ◽  
Vol 24 (3) ◽  
pp. 358-361 ◽  
Author(s):  
Jingsheng Shi ◽  
Chun Xian Guo ◽  
Mary B. Chan-Park ◽  
Chang Ming Li
2018 ◽  
Vol 6 (29) ◽  
pp. 7714-7727 ◽  
Author(s):  
Li Xiang ◽  
Heng Zhang ◽  
Youfan Hu ◽  
Lian-Mao Peng

A review of CNT-based high-performance flexible ICs, including the recent progresses of this technology and emerging implementation of this technology in system-level applications.


2021 ◽  
pp. 2150288
Author(s):  
Kuibo Lan ◽  
Fei Wang ◽  
Qijun Zhang ◽  
Zhenqiang Ma ◽  
Guoxuan Qin

Flexible radio-frequency (RF) capacitors and inductors on the plastic substrates have been fabricated and characterized under mechanical bending conditions. A novel method to predict the RF performance for them on different bending states is demonstrated. Artificial neural network (ANN) shows good modeling accuracy for the flexible RF passive components with bending strains from dc to resonant frequency ([Formula: see text] GHz for the capacitor/inductor). More importantly, the automatically generated ANN model, with no need of repeatedly tuning the model parameters, has demonstrated the ability to predict the RF responses for the flexible capacitors and inductors under arbitrary bending conditions with only a few sets of experimental data. Once established, this model can automatically learn the structure of the input date and predict the actual results on specific bending state which can provide an original method to measure the performance for flexible electronics on even extreme bent radius. The ANN model indicates good potential for accurate design, characterization and optimization of the high-performance flexible electronics.


Author(s):  
Nipun Misra ◽  
Yaoling Pan ◽  
Costas P. Grigoropoulos

Semiconductor nanowires offer an alternative bottom-up route for nanoscale electronics and photonics application. The possibility of combining nanowires with cheap flexible substrates in the form of nanowire thin-films or composite materials composed of nanowires has opened up a new paradigm for inorganic semiconductor based technologies on flexible substrates. Recently, thin film transistors have been fabricated on plastic substrates based on this technique. This paper discusses laser thermal processing of nanowires as an alternative to conventional thermal processing. Ultra-short pulsed lasers allow for localized energy deposition into nanowires and can therefore enable thermal processing of nanowires on sensitive substrates such as plastics. Laser-based annealing of ion-implanted silicon nanowires is investigated for application in high performance flexible electronics. The efficacy of laser processing is examined through studies of the effect of number of pulses and incident fluence levels on conductance of the nanowires. Finally, numerical predictions of the absorption in the nanowires are presented.


Author(s):  
Erik C. Anderson ◽  
Thomas L. Bougher ◽  
Baratunde A. Cola

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