AbstractOwing to its self-limiting growth mechanism the Atomic Layer Epitaxy (ALE) technique is capable of growing uniform high quality thin films on large area substrates. Therefore, ALE is an attractive choice for depositing transparent electrically conducting films for large area applications, such as solar cells and flat panel displays. In this paper studies on ALE growth of In2O3 and ZnO based transparent conducting thin films will be presented. In2O3, In2O3:Sn and In 2O3:F films were grown at 500 °C and their lowest resistivities were about 3 x 10-3, 2 x 10-3 and 6 x 10-4 Ωcm, respectively. Low temperature (120 - 350 °C) ALE deposition processes were developed for ZnO and ZnO:AI films, the latter having resistivities as low as 8 x 10-4 Ωcm. A straightforward scale-up of the ZnO process from 5 x 5 to 30 x 30 cm 2 substrate size was also demonstrated.
Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displays [1,2]. It is expected that with good quality p-Si, “System on Glass” products, in which entire electronic circuitry is incorporated directly onto glass are achievable [3]. This approach therefore has the potential to fabricate Integrated AMLCD's (IAMLCD) and bypass conventional Si wafer based products and integrate CMOS circuits with direct view TFT LCD manufacturing. To realize this potential; it is necessary to develop a production process for depositing repeatable, good quality p-Si films on to large area glass substrates.
ABSTRACTThe advantages of rapid thermal processing over slow, batch type processing have been demonstrated clearly in flat panel display manufacturing for a number of years. In the case of electroluminescence FPD, the brightness of the blue phosphor is increased by as much as 100%.However, rapid thermal processors that use a lamp-based heat source - either a tungsten lamp array or a single arc lamp - have great difficulty in achieving heating uniformity over large areas.By using a resistance-heated continuous heat source developed initially for RTP processing of large silicon wafers, temperature uniformity of less than +/− 2.5°C has been achieved over a panel with diagonal of 530mm.A description of the system and its characteristics are presented.
Large area deposition of field emission cathodes for flat panel displays