Processing of amorphous silicon flat panel displays with large-area excimer lasers

1997 ◽  
Author(s):  
Marc X. Stehle ◽  
Bruno Godard ◽  
Jean-Louis P. Stehle
Keyword(s):  
Amorphous Silicon ◽  
Excimer Lasers ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel

Amorphous Silicon Alloy Technology For Active Matrix Displays

1986 ◽  
Vol 70 ◽  
Author(s):  
Z. Yaniv ◽  
V. Cannella ◽  
Y. Baron ◽  
A. Lien ◽  
J. McGill
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Gate Dielectric ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel ◽  
High Quality ◽  
Active Matrix ◽  
Silicon Alloy ◽  
Metal Insulator Metal

ABSTRACTThin film semiconductor devices have been investigated over the past twenty years for application in large area flat panel displays. The development of thin film transistors and diodes based on amorphous silicon (a-Si) alloy materials has made the application of these devices, to display technologies, very attractive. More recently, manufacturing techniques to produce high quality large area films of amorphous silicon alloys have been demonstrated for photovoltaic applications.Most of the current research and development effort on active matrix liquid crystal displays (LCDs) has concentrated on a-Si alloy TFTs. The success of TFT based displays for large area flat panel displays has been limited so far, mainly due to the difficulty of obtaining a high quality gate dielectric by plasma deposition and due to the presence of crossing conductors on the same substrate, both increasing the probability of defects in the display. When a two terminal sandwich device is used, on the other hand, no gate dielectric is required, hence, a higher yield can be expected. Metal-insulator-metal and hydrogenated amorphous silicon alloy devices have been proposed for incorporation in LCDs. Performance requirements for a useful active matrix switching element and a comparison among the different a-Si alloy thin film devices used for this purpose will be reviewed.

Thin films engineering of indium tin oxide: Large area flat panel displays application

2006 ◽  
Vol 200 (20-21) ◽  
pp. 5751-5759 ◽  
Author(s):  
U. Betz ◽  
M. Kharrazi Olsson ◽  
J. Marthy ◽  
M.F. Escolá ◽  
F. Atamny
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel

Amorphous Silicon TFTS and Flat Panel Displays

1996 ◽  
Vol 420 ◽  
Author(s):  
T. Tsukada
Keyword(s):  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Liquid Crystal Displays ◽  
Current Status ◽  
Design Rule ◽  
Flat Panel Displays ◽  
Viewing Angle ◽  
Flat Panel ◽  
Product Application

AbstractThe current status and next-generation technologies for liquid-crystal displays based on amorphous silicon TFTs are described. Panel size, resolution, design rule, and viewing angle are discussed from the standpoint of panel performance, productivity, and product application. The material properties for future TFT/LCDs are specified based on the discussions of design rule.

Amorphous Silicon Tfts and Flat Panel Displays

1996 ◽  
Vol 424 ◽  
Author(s):  
T. Tsukada
Keyword(s):  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Liquid Crystal Displays ◽  
Current Status ◽  
Design Rule ◽  
Flat Panel Displays ◽  
Viewing Angle ◽  
Flat Panel ◽  
Product Application

AbstractThe current status and next-generation technologies for liquid-crystal displays based on amorphous silicon TFTs are described. Panel size, resolution, design rule, and viewing angle are discussed from the standpoint of panel performance, productivity, and product application. The material properties for future TFT/LCDs are specified based on the discussions of design rule.

Ale Growth of Transparent Conductors

1996 ◽  
Vol 426 ◽  
Author(s):  
Mikko Rit ◽  
Timo Asikainen ◽  
Markku Leskelä ◽  
Jarmo Skarp
Keyword(s):  
Thin Films ◽  
Scale Up ◽  
Atomic Layer ◽  
Transparent Conductors ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel ◽  
Electrically Conducting ◽  
Transparent Conducting ◽  
Deposition Processes

AbstractOwing to its self-limiting growth mechanism the Atomic Layer Epitaxy (ALE) technique is capable of growing uniform high quality thin films on large area substrates. Therefore, ALE is an attractive choice for depositing transparent electrically conducting films for large area applications, such as solar cells and flat panel displays. In this paper studies on ALE growth of In2O3 and ZnO based transparent conducting thin films will be presented. In2O3, In2O3:Sn and In 2O3:F films were grown at 500 °C and their lowest resistivities were about 3 x 10-3, 2 x 10-3 and 6 x 10-4 Ωcm, respectively. Low temperature (120 - 350 °C) ALE deposition processes were developed for ZnO and ZnO:AI films, the latter having resistivities as low as 8 x 10-4 Ωcm. A straightforward scale-up of the ZnO process from 5 x 5 to 30 x 30 cm 2 substrate size was also demonstrated.

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