Large-area high-throughput high-resolution lithography systems for flat-panel displays and microelectronic modules

Author(s):  
Kanti Jain ◽  
Thomas J. Dunn ◽  
Nestor Farmiga ◽  
Mark Zemel ◽  
Carl Weisbecker
2006 ◽  
Vol 200 (20-21) ◽  
pp. 5751-5759 ◽  
Author(s):  
U. Betz ◽  
M. Kharrazi Olsson ◽  
J. Marthy ◽  
M.F. Escolá ◽  
F. Atamny

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 421 ◽  
Author(s):  
Fu-Ming Tzu ◽  
Jung-Hua Chou

Among colours, the green colour has the most sensitivity in human vision so that green colour defects on displays can be effortlessly perceived by a photopic eye with the most intensity in the wavelength 555 nm of the spectrum. With the market moving forward to high resolution, displays can have resolutions of 10 million pixels. Therefore, the method of detecting the appearance of the panel using ultra-high resolutions in TFT-LCD is important. The machine vision associated with transmission chromaticity spectrometer that quantises the defects are explored, such as blackening and whitening. The result shows the significant phenomena to recognize the non-uniformity of film-related chromatic variation. In contrast, the quantitative assessment illustrates that the just noticeable difference (JND) of chromaticity CIE xyY at 0.001 is the measuring sensitivity for the chromatic variables (x, y), whereas JND is a perceptible threshold for a colour difference metric. Moreover, an optical device associated with a 198Hg discharge lamp calibrates the spectrometer accuracy.


1996 ◽  
Vol 426 ◽  
Author(s):  
Mikko Rit ◽  
Timo Asikainen ◽  
Markku Leskelä ◽  
Jarmo Skarp

AbstractOwing to its self-limiting growth mechanism the Atomic Layer Epitaxy (ALE) technique is capable of growing uniform high quality thin films on large area substrates. Therefore, ALE is an attractive choice for depositing transparent electrically conducting films for large area applications, such as solar cells and flat panel displays. In this paper studies on ALE growth of In2O3 and ZnO based transparent conducting thin films will be presented. In2O3, In2O3:Sn and In 2O3:F films were grown at 500 °C and their lowest resistivities were about 3 x 10-3, 2 x 10-3 and 6 x 10-4 Ωcm, respectively. Low temperature (120 - 350 °C) ALE deposition processes were developed for ZnO and ZnO:AI films, the latter having resistivities as low as 8 x 10-4 Ωcm. A straightforward scale-up of the ZnO process from 5 x 5 to 30 x 30 cm 2 substrate size was also demonstrated.


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