scholarly journals Counterbalanced Valve Metal Oxide as a Reliable Dielectric Layer for Electrowetting-on-dielectric Devices

2019 ◽  
Vol 31 (9) ◽  
pp. 2861
Author(s):  
Supin Chen ◽  
Chang-Jin �gCJ�h Kim
Keyword(s):  
Metal Oxide ◽  
Dielectric Layer ◽  
Electrowetting On Dielectric ◽  
Valve Metal ◽  
Dielectric Devices

Design of crescent driving electrodes for digital electrowetting-on-dielectric devices

2014 ◽  
Vol 22 (3) ◽  
pp. 633-641
Author(s):  
许晓威 XU Xiao-wei ◽  
陈立国 CHEN Li- guo ◽  
贺文元 HE Wen-yuan ◽  
陈涛 CHEN Tao ◽  
孙立宁 SUN Li- ning
Keyword(s):  
Electrowetting On Dielectric ◽  
Dielectric Devices

Optimization of the dielectric layer for electrowetting on dielectric

Integration ◽  
2019 ◽  
Vol 67 ◽  
pp. 50-59
Author(s):  
Semih Türk ◽  
Alexander Schug ◽  
Reinhard Viga ◽  
Andreas Jupe ◽  
Holger Vogt
Keyword(s):  
Dielectric Layer ◽  
Electrowetting On Dielectric

Influence of the Valve Metal Oxide on the Properties of Ruthenium Based Mixed Oxide Electrodes: II . Coatings

1989 ◽  
Vol 136 (9) ◽  
pp. 2596-2598 ◽  
Author(s):  
A. de Battisti ◽  
G. Lodi ◽  
M. Cappadonia ◽  
G. Battaglin ◽  
R. Kötz
Keyword(s):  
Metal Oxide ◽  
Mixed Oxide ◽  
Oxide Electrodes ◽  
Valve Metal ◽  
Mixed Oxide Electrodes

Mechanical Filtration of Particles in Electrowetting on Dielectric Devices

2011 ◽  
Vol 20 (4) ◽  
pp. 1010-1015 ◽  
Author(s):  
M. J. Schertzer ◽  
R. Ben-Mrad ◽  
Pierre E. Sullivan
Keyword(s):  
Electrowetting On Dielectric ◽  
Dielectric Devices

scholarly journals Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 425 ◽  
Author(s):  
Siting Chen ◽  
Yuzhi Li ◽  
Yilong Lin ◽  
Penghui He ◽  
Teng Long ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Acid Resistance ◽  
Semiconductor Layer ◽  
Sn Doping ◽  
First Time

Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.

Influence of the valve metal oxide on the properties of ruthenium based mixed oxide electrodes

1986 ◽  
Vol 200 (1-2) ◽  
pp. 93-104 ◽  
Author(s):  
A De Battisti ◽  
R. Brina ◽  
G. Gavelli ◽  
A. Benedetti ◽  
G. Fagherazzi
Keyword(s):  
Metal Oxide ◽  
Mixed Oxide ◽  
Oxide Electrodes ◽  
Valve Metal ◽  
Mixed Oxide Electrodes

Methods for Mechanical Filtration and Automated Droplet Monitoring in Electrowetting on Dielectric Devices

2012 ◽  
Author(s):  
Michael J. Schertzer ◽  
Sergey I. Gubarenko ◽  
Ridha Ben-Mrad ◽  
Pierre E. Sullivan
Keyword(s):  
Electric Fields ◽  
Chemical Reactions ◽  
Contact Angle Hysteresis ◽  
White Blood Cells ◽  
Microfluidic Devices ◽  
Analytical Models ◽  
Filtration Method ◽  
Electrowetting On Dielectric ◽  
Discrete Flow ◽  
Dielectric Devices

Discrete flow microfluidic devices have been identified as a technology that can be used to efficiently deliver health care services by reducing the cycle times and reagent consumption of common biological protocols and medical diagnostic procedures while reducing overhead costs by performing these applications at the point of care. Electrowetting on dielectric is one promising discrete flow microfluidic platform that can individually create, manipulate, and mix droplets through the application of asymmetric electric fields. The work presented outlines fundamental and practical contributions to the understanding and advancement of electrowetting on dielectric devices that the authors are using to develop a device capable of performing immunoassays on chip. Explicit analytical models for capillary force and the reduction in that force by contact angle hysteresis as a function of the three-dimensional shape of the droplet were derived to develop an empirically validated analytical model for transient motion of droplets in electrowetting on dielectric devices. This model accurately predicts the maximum droplet displacement and travel time to within 2.3% and 2.7%, respectively; whereas the average droplet velocity was always predicted to within 8.1%. It also demonstrates a method for real time monitoring of droplet composition, particle concentration, and chemical reactions in electrowetting on dielectric devices without optical access. This method has been used to determine the concentration of water-methanol solutions, measure the concentration of glass microspheres at various concentrations, and detect the chemical reactions that are typically used in immunoassays. A method for the mechanical filtration of droplets in these devices will also be presented. The proposed filtration method was successful at pore sizes at least two orders of magnitude below the droplet height, which is small enough to separate red and white blood cells in continuous flow microfluidic devices.

An Empirically Validated Analytical Model of Droplet Dynamics in Electrowetting on Dielectric Devices

Langmuir ◽  
2010 ◽  
Vol 26 (24) ◽  
pp. 19230-19238 ◽  
Author(s):  
M. J. Schertzer ◽  
S. I. Gubarenko ◽  
R. Ben-Mrad ◽  
P. E. Sullivan
Keyword(s):  
Analytical Model ◽  
Droplet Dynamics ◽  
Electrowetting On Dielectric ◽  
Dielectric Devices
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