scholarly journals In situ Monitoring of Vapor-phase Polymerization and Characterization of Poly(3,4-ethylenedioxythiophene) Thin Films

2018 ◽  
Vol 30 (12) ◽  
pp. 2873 ◽  
Author(s):  
Yasuko Koshiba ◽  
Mana Hirai ◽  
Shohei Horike ◽  
Masahiro Morimoto ◽  
Masahiro Misaki ◽  
...  
2018 ◽  
Vol 24 (S1) ◽  
pp. 1900-1901
Author(s):  
B. D. Esser ◽  
A. S. Ahmed ◽  
K. Meng ◽  
J. Rowland ◽  
M. Randeria ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Lei Yao ◽  
Alan D. Steinman ◽  
Xiang Wan ◽  
Xiubo Shu ◽  
Liqiang Xie

AbstractThe passive sampling method of diffusive gradients in thin-films (DGT) was developed to provide a quantitative and time-integrated measurement of microcystin-LR (MC-LR) in waters. The DGT method in this study used HLB (hydrophilic-lipophilic-balanced) material as a binding agent, and methanol as an eluent. The diffusion coefficient of MC-LR was 5.01 × 10−6 cm2 s−1 at 25 °C in 0.45 mm thick diffusion layer. This DGT method had a binding capacity of 4.24 μg per binding gel disk (3.14 cm2), ensuring sufficient capacity to measure MC-LR in most water matrices. The detection limit of HLB DGT was 0.48 ng L−1. DGT coupled to analysis by HPLC appears to be an accurate method for MC-LR monitoring. Comparison of DGT measurements for MC-LR in water and a conventional active sampling method showed little difference. This study demonstrates that HLB-based DGT is a useful tool for in situ monitoring of MC-LR in fresh waters.


2012 ◽  
Vol 544 ◽  
pp. 34-38 ◽  
Author(s):  
T. Hosokai ◽  
A. Hinderhofer ◽  
A. Vorobiev ◽  
C. Lorch ◽  
T. Watanabe ◽  
...  

1992 ◽  
Vol 281 ◽  
Author(s):  
Weimin Zhou ◽  
H. Shen ◽  
J. Pamulapati ◽  
M. Dutta ◽  
B. R. Bennett ◽  
...  

ABSTRACTPhotoreflectance (PR) has been performed on a series of undoped and n-type, InGaAs and InAlAs molecular beam epitaxy (MBE) grown layers with different In mole fractions, and epilayer thicknesses on Fe-doped semi-insulating (SI)-InP substrates. From investigations of the temperature dependence, time constant dependence and an additional cw light beam intensity dependence, three substrate peaks are identified as an excitonic transition from the substrate, a free electron transition near the interface which gives a Franz-Keldysh oscillation (KFO), and a transition from the spin-orbit split-off valence band. The results are indicative of a redistribution of charge near the substrate interface in the process of MBE growth; the associated PR signal (phase) could be used for in-situ monitoring of epilayer growth on SI-InP wafers.


1992 ◽  
Vol 124 (1-4) ◽  
pp. 1-9 ◽  
Author(s):  
D.W. Kisker ◽  
G.B. Stephenson ◽  
P.H. Fuoss ◽  
F.J. Lamelas ◽  
S. Brennan ◽  
...  

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