Photoreflectance Characterization of the Semi-Insulating InP Substrate Interface with InGaAs and InAlAs Epilayers

1992 ◽  
Vol 281 ◽  
Author(s):  
Weimin Zhou ◽  
H. Shen ◽  
J. Pamulapati ◽  
M. Dutta ◽  
B. R. Bennett ◽  
...  
Keyword(s):  
Electron Transition ◽  
In Situ Monitoring ◽  
Signal Phase ◽  
Mbe Growth ◽  
Substrate Interface ◽  
Inp Substrate ◽  
Excitonic Transition ◽  
Inp Substrates

ABSTRACTPhotoreflectance (PR) has been performed on a series of undoped and n-type, InGaAs and InAlAs molecular beam epitaxy (MBE) grown layers with different In mole fractions, and epilayer thicknesses on Fe-doped semi-insulating (SI)-InP substrates. From investigations of the temperature dependence, time constant dependence and an additional cw light beam intensity dependence, three substrate peaks are identified as an excitonic transition from the substrate, a free electron transition near the interface which gives a Franz-Keldysh oscillation (KFO), and a transition from the spin-orbit split-off valence band. The results are indicative of a redistribution of charge near the substrate interface in the process of MBE growth; the associated PR signal (phase) could be used for in-situ monitoring of epilayer growth on SI-InP wafers.

MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison between N-polarity and In-polarity Growth Processes

2004 ◽  
Vol 831 ◽  
Author(s):  
Akihiko Yoshikawa ◽  
Yoshihiro Ishitani ◽  
Song-Bek Che ◽  
Ke Xu ◽  
Xinqiang Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Hall Mobility ◽  
Room Temperature ◽  
In Situ Monitoring ◽  
Mbe Growth ◽  
X Ray ◽  
Step Flow ◽  
Rich Condition

ABSTRACTEpitaxy of InN films with N-polarity and In-polarity was investigated by RF-MBE with several in-situ monitoring/controlling systems. It was found that the epitaxy temperature for N-polarity growth could be as high as 600 °C and this was about 100 deg higher than that for In-polarity case. This temperature difference in two polarities drastically affected not only the growth behaviors but also the properties of InN epilayers, i.e. N-polarity growth was preferable in both view-points. The step-flow-like surface morphology was achieved for the InN films grown with N-polarity at 580 °C. The FWHMs of X-ray rocking curves for InN (002) and (102) of 5–8 μm-thick InN films grown in N-polarity were about 200–350 and 650–950 arcsec, respectively. The highest Hall mobility was above 2000 cm2/V·s with a background carrier concentration of 1–2×1018 cm−3 at room temperature. For both polarity films, N-rich condition was necessary for the stable InN growth to obtain 5–8 μm-thick InN films.

In situ monitoring of the growth and characterization of (PrMnO3)n(SrMnO3)n superlattices

2003 ◽  
Vol 94 (4) ◽  
pp. 2716-2724 ◽  
Author(s):  
B. Mercey ◽  
P. A. Salvador ◽  
Ph. Lecoeur ◽  
W. Prellier ◽  
M. Hervieu ◽  
...  
Keyword(s):  
In Situ Monitoring

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

MBE growth and characterization of in situ arsenic doped HgCdTe

1998 ◽  
Vol 27 (6) ◽  
pp. 595-599 ◽  
Author(s):  
A. C. Chen ◽  
M. Zandian ◽  
D. D. Edwall ◽  
R. E. De Wames ◽  
P. S. Wijewarnasuriya ◽  
...  
Keyword(s):  
Mbe Growth

Polarization Resolved Grazing Angle Scatterometry for In Situ Monitoring of Roughness for Silicon and Compound Solar Cells, Light Emitting Devices and other Structured Surfaces

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3129-3133
Author(s):  
Wojtek J. Walecki ◽  
Peter S. Walecki ◽  
Eve S. Walecki ◽  
Abigail S. Walecki
Keyword(s):  
Solar Cells ◽  
Grazing Angle ◽  
Stray Light ◽  
In Situ Monitoring ◽  
In Situ Characterization ◽  
Light Emitting ◽  
Structured Surfaces ◽  
Light Emitting Devices

ABSTRACTNovel metrology tool for in-situ characterization of surfaces semiconductor solar cells (both silicon and compound), and Light Emitting Device diffusers is presented. The tool measures the total integrated scattering when measuring forward, or back-reflection at very large angles of incidence. The tool is insensitive to vibrations and stray light. We discuss polarization resolved data and characterize our technique using NIST traceable standards. We discuss it’s applications to semiconductor manufacturing.

scholarly journals Application of image flow cytometry and photoacoustics for the characterization of red blood cell storage lesions

2021 ◽  
Author(s):  
Ruben N. Pinto
Keyword(s):  
Flow Cytometry ◽  
Structural Changes ◽  
Blood Gas Analysis ◽  
Gas Analysis ◽  
In Situ Monitoring ◽  
Image Flow ◽  
Morphology Characterization

Significant functional/structural changes of red blood cells (RBCs) have been documented during its in vitro storage. Collectively termed as RBC storage lesions, changes include an increase in RBC oxygen saturation (SO2) and an increase in irreversibly damaged RBCs (spheroechinocytes). In this work, novel optical techniques are presented for determining the spheroechinocyte population as a function of storage time via automated image flow cytometry (IFC) morphology characterization, and the acquisition of RBC SO2 via an in situ photoacoustic (PA) method. Blood gas analysis (BGA) was used as the gold standard SO2 measure. Over the lifespan of seven blood bags, the IFC spheroechinocyte population – PA SO2 correlation was found to be strong (0.600.95) shows high potential for in situ monitoring of RBC storage lesions.

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