scholarly journals A constrained optimization approach to fit protein structure to x-ray solution scattering measurements

2015 ◽  
Author(s):  
Biel Roig i Solvas
Keyword(s):  
Protein Structure ◽  
Constrained Optimization ◽  
Optimization Approach ◽  
X Ray ◽  
Scattering Measurements

Dimensions de micelles mixtes de p-alkylbenzènesulfonates par diffusion central des rayons X

1977 ◽  
Vol 10 (1) ◽  
pp. 37-44 ◽  
Author(s):  
C. Cabos ◽  
P. Delord ◽  
J. Rouviere
Keyword(s):  
Small Angle ◽  
Small Angle Scattering ◽  
Micellar Solutions ◽  
Probable Structure ◽  
X Ray ◽  
Absolute Scale ◽  
Angle Scattering ◽  
Scattering Measurements ◽  
Two Component ◽  
Most Probable Structure

The structure of micellar solutions is determined from X-ray small-angle scattering measurements on an absolute scale. The most probable structure is chosen by comparison with spherical cylindrical and lamellar models. This method is applied to two-component micelles and it is possible to follow the variation of micellar dimensions when the concentration of each component is varying.

X-Ray and Raman Studies of Interlayer Mixing in SimGem Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang
Keyword(s):  
Activation Energy ◽  
Raman Scattering ◽  
Vacancy Mechanism ◽  
Strained Si ◽  
X Ray ◽  
Scattering Measurements ◽  
Intensity Changes ◽  
Interface Mixing ◽  
Interdiffusion Coefficients

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.

Small angle x-ray scattering measurements of lithographic patterns with sidewall roughness from vertical standing waves

2007 ◽  
Vol 90 (19) ◽  
pp. 193122 ◽  
Author(s):  
Chengqing Wang ◽  
Ronald L. Jones ◽  
Eric K. Lin ◽  
Wen-Li Wu ◽  
Jim Leu
Keyword(s):  
Small Angle ◽  
Standing Waves ◽  
Sidewall Roughness ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Measurements ◽  
Ray Scattering
Sign in / Sign up

Export Citation Format

Share Document