X-Ray and Raman Studies of Interlayer Mixing in SimGem Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang
Keyword(s):  
Activation Energy ◽  
Raman Scattering ◽  
Vacancy Mechanism ◽  
Strained Si ◽  
X Ray ◽  
Scattering Measurements ◽  
Intensity Changes ◽  
Interface Mixing ◽  
Interdiffusion Coefficients

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.

Studies of Interface Mixing in a Symmetrically Strained Ge/Si Superlattice

1989 ◽  
Vol 148 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet ◽  
K. L. Wang
Keyword(s):  
Activation Energy ◽  
Raman Scattering ◽  
Buffer Layer ◽  
Vacancy Mechanism ◽  
X Ray Diffraction ◽  
X Ray ◽  
Arrhenius Relation ◽  
Interface Mixing ◽  
Interdiffusion Coefficients

ABSTRACTRaman scattering and x ray diffraction were used to study the effects of annealing on a Ge/Si superlattice that had been grown upon a Ge0.4Si0.6 alloy buffer layer which distributes the strain between the layers. Anneals above 910K caused substantial mixing at the Ge-Si interfaces. The interdiffusion coefficients obtained from the x-ray data were found to obey an Arrhenius relation with an activation energy of 3.1±0.2eV. Initial intermixing seems to be dominated by the diffusion of Si atoms into the Ge layers via a vacancy mechanism.

X-ray diffraction and Raman scattering measurements on silica xerogels

2002 ◽  
Vol 307-310 ◽  
pp. 135-141 ◽  
Author(s):  
S Caponi ◽  
M Ferrari ◽  
A Fontana ◽  
C Masciovecchio ◽  
A Mermet ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Silica Xerogels ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Measurements

X-ray and Raman scattering measurements in finite, pseudomorphically strained, Fibonacci lattices

1988 ◽  
Vol 37 (14) ◽  
pp. 8459-8461 ◽  
Author(s):  
A. T. Macrander ◽  
G. P. Schwartz ◽  
J. Bevk
Keyword(s):  
Raman Scattering ◽  
X Ray ◽  
Scattering Measurements

The Effects of Stress on the Interdiffusion in Si1-xGex/Si Superlattices

1991 ◽  
Vol 226 ◽  
Author(s):  
S.M. Prokes
Keyword(s):  
Activation Energy ◽  
Tensile Stress ◽  
Defect Formation ◽  
External Stress ◽  
X Ray Diffraction ◽  
Strained Si ◽  
X Ray ◽  
Barrier Layers ◽  
Long Period ◽  
Kinetics Of

AbstractThe effects of grown-in stress and applied external stress on the interdiffusion behavior in long-period Si0.7Ge0.3/Si is examined using x-ray diffraction and Raman Spectroscopy. Both symmetrically and asymmetrically–strained superlattices have been examined, and an activation energy for interdiffusion of 3.9 eV and 4.6eV have been obtained, respectively. In addition, an enhanced interdiffusion has also been measured when the asymmetrically–strained superlattice was subjected to an external tensile stress during annealing. In both cases, enhanced interdiffusion has been measured whenever the Si barrier layers experience tensile stress during annealing. The Raman results indicate that enhanced Ge diffusion into the Si barriers occur when these barriers are put under tensile stress. This result will be discussed in terms of the kinetics of defect formation and motion in the strained Si barriers.

scholarly journals Zircon to monazite phase transition in CeVO4: X-ray diffraction and Raman-scattering measurements

2011 ◽  
Vol 84 (2) ◽  
Author(s):  
V. Panchal ◽  
S. López-Moreno ◽  
D. Santamaría-Pérez ◽  
D. Errandonea ◽  
F. J. Manjón ◽  
...  
Keyword(s):  
Phase Transition ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Measurements

Raman scattering measurements of vibrational and rotational distributions in expanding nitrogen

1993 ◽  
Author(s):  
WALTER GILLESPIE ◽  
DANIEL BERSHADER ◽  
SURENDRA SHARMA ◽  
STEPHEN RUFFIN
Keyword(s):  
Raman Scattering ◽  
Scattering Measurements

Collapse of vibrational structure in spectra of resonant x-ray Raman scattering

1997 ◽  
Vol 56 (1) ◽  
pp. 256-264 ◽  
Author(s):  
Faris Gel’mukhanov ◽  
Timofei Privalov ◽  
Hans Ågren
Keyword(s):  
Raman Scattering ◽  
Vibrational Structure ◽  
X Ray
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