EFFECTS OF BAND STRUCTURE, TEMPERATURE, AND QUANTUM EFFICIENCY ON PbSe/PbSrSe QUANTUM WELL LASER IN THE INFRARED REGION

2017 ◽  
Vol 17 (6) ◽  
pp. 1451-1474
Author(s):  
M. Khodr
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Quantum Efficiency ◽  
Infrared Region ◽  
Quantum Well Laser

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Nitride band-structure model in a quantum well laser simulator

2008 ◽  
Vol 40 (5-6) ◽  
pp. 295-299 ◽  
Author(s):  
Anusha Venkatachalam ◽  
P. D. Yoder ◽  
Benjamin Klein ◽  
Aditya Kulkarni
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Structure Model ◽  
Quantum Well Laser ◽  
Band Structure Model

Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 50245-50249 ◽  
Author(s):  
Yingdong Tian ◽  
Yun Zhang ◽  
Jianchang Yan ◽  
Xiang Chen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Lower Threshold ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Quantum Well Laser ◽  
Cleaved Facets ◽  
Multiple Quantum Well Laser

We demonstrate an optically pumped AlGaN-based laser at 272 nm with two-step etched facets. Compared with a laser with cleaved facets, the laser with etched facets had a lower threshold and higher differential quantum efficiency.

Theory of Direct-Transition Optical Gain in a Novel n+ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser

2013 ◽  
Vol 746 ◽  
pp. 197-202 ◽  
Author(s):  
W.J. Fan
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Dispersion Curves ◽  
Doping Effect ◽  
Direct Transition ◽  
Quantum Well Laser ◽  
Gain Spectra

The band structure and optical gain of a novel n+ doping tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. The doping effect in Ge quantum well and the effect of the carrier leakage into L valley on the optical gain will also be considered. The E-k dispersion curves and optical gain spectra will be obtained and discussed.

The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum Well Laser

1997 ◽  
Vol 484 ◽  
Author(s):  
K. S. Chan ◽  
Michael C. Y. Chan
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Tensile Strain ◽  
Optical Gain ◽  
Valence Band Structure ◽  
Quantum Well Laser ◽  
Tensile Strains

AbstractIn this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60Å. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.

scholarly journals Спектры фотолюминесценции квантовых ям InAs/GaInSb/InAs в среднем ИК диапазоне

2020 ◽  
Vol 54 (9) ◽  
pp. 929
Author(s):  
В.В. Уточкин ◽  
М.А. Фадеев ◽  
С.C. Криштопенко ◽  
В.В. Румянцев ◽  
В.Я. Алешкин ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Infrared Region ◽  
Spectral Lines ◽  
Photoluminescence Spectra ◽  
Interband Transitions ◽  
Mid Infrared ◽  
Generation Of Radiation

Abstract The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure.

InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region

2000 ◽  
Vol 147 (3) ◽  
pp. 181-187 ◽  
Author(s):  
P. Christol ◽  
P. Bigenwald ◽  
O. Gilard ◽  
K. Heime ◽  
A. Behres ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Region ◽  
Laser Structure ◽  
Quantum Well Laser
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