Band-structure engineering of a cubic GaN quantum-well laser

1996 ◽  
Vol 8 (2) ◽  
pp. 194-196 ◽  
Author(s):  
Doyeol Ahn
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Quantum Well Laser ◽  
Cubic Gan ◽  
Structure Engineering

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Nitride band-structure model in a quantum well laser simulator

2008 ◽  
Vol 40 (5-6) ◽  
pp. 295-299 ◽  
Author(s):  
Anusha Venkatachalam ◽  
P. D. Yoder ◽  
Benjamin Klein ◽  
Aditya Kulkarni
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Structure Model ◽  
Quantum Well Laser ◽  
Band Structure Model

Theory of Direct-Transition Optical Gain in a Novel n+ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser

2013 ◽  
Vol 746 ◽  
pp. 197-202 ◽  
Author(s):  
W.J. Fan
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Dispersion Curves ◽  
Doping Effect ◽  
Direct Transition ◽  
Quantum Well Laser ◽  
Gain Spectra

The band structure and optical gain of a novel n+ doping tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. The doping effect in Ge quantum well and the effect of the carrier leakage into L valley on the optical gain will also be considered. The E-k dispersion curves and optical gain spectra will be obtained and discussed.

The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum Well Laser

1997 ◽  
Vol 484 ◽  
Author(s):  
K. S. Chan ◽  
Michael C. Y. Chan
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Tensile Strain ◽  
Optical Gain ◽  
Valence Band Structure ◽  
Quantum Well Laser ◽  
Tensile Strains

AbstractIn this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60Å. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.

New Defect Related Phenomena in Semiconductor Heterolayers and Superlattices

1987 ◽  
Vol 104 ◽  
Author(s):  
Federico Capasso ◽  
Fabio Beltram
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Quantum Wells ◽  
Recent Work ◽  
Quantum Well Structures ◽  
Deep Centers ◽  
Deep Traps ◽  
Structure Engineering

ABSTRACTRecent work on defect related phenomena in heterojunctions and quantum well structures is reviewed. These include situations in which quantum wells behave as deep traps and the use of shallow and deep centers as new tools for band structure engineering. Among the latter tunable band discontinuities and the artificial tailoring of superlattice states via δ-doping techniques are discussed.

Sign in / Sign up

Export Citation Format

Share Document