High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm

1989 ◽  
Vol 25 (25) ◽  
pp. 1735 ◽  
Author(s):  
P.J.A. Thijs ◽  
T. van Dongen
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
High Power ◽  
Laser Diodes ◽  
High Quantum Efficiency ◽  
Strained Layer ◽  
Power Modulation ◽  
High Quantum ◽  
Quantum Well Laser

High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

2011 ◽  
Vol 98 (20) ◽  
pp. 201107 ◽  
Author(s):  
R. M. Farrell ◽  
C. J. Neufeld ◽  
S. C. Cruz ◽  
J. R. Lang ◽  
M. Iza ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Quantum Efficiency ◽  
Spectral Response ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
High Quantum
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