Atomic and Molecular Beams Control in Molecular Beam Epitaxy

2021 ◽  
Vol 23 (1) ◽  
pp. 47-56
Author(s):  
N.A. Kulchitsky ◽  
◽  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Scattering ◽  
Molecular Beam ◽  
Rapid Development ◽  
Molecular Beams ◽  
Mass Spectrometric ◽  
Universal Method ◽  
Fast Electrons ◽  
Growth Chambers ◽  
Special Growth

Rapid development of molecular beam epitaxy (MBE) in recent decades has led to the emergence of a variety of technological installations, as well as electronic and optical diagnostics of growing layers, as well as atomic and molecular beams. Known methods for monitoring atomic and molecular beams in MBE installations-mass spectrometric and luminescent - involve bulky sensors, which can only be placed in special growth chambers. This paper describes a structurally simple and fairly universal method for determining the intensities of atomic and molecular beams, based on registering the amount of electron scattering at small angles that occur when a narrow electron beam interacts with the atoms of a vaporized substance. We consider the theoretical prerequisites for the diagnosis of an atomic beam by the phenomenon of scattering of fast electrons in it.

Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Passlack ◽  
M. Hong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beams ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
In Situ Deposition ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractWe have extended the spectrum of molecular-beam epitaxy (MBE) related techniques by introducing in-situ deposition of oxides. The oxide films have been deposited on clean, atomically ordered (100) GaAs wafer surfaces using molecular beams of gallium-, magnesium-, silicon-, or aluminum oxide. Among the fabricated oxide-GaAs heterostructures, Ga2O3-GaAs interfaces exhibit unique electronic properties including an interface state density Dit in the low 1010 cm−2eV−1 range and an interface recombination velocity S of 4000 cm/s. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Further, thermodynamic and photochemical stability of excellent electronic interface properties of Ga2O3-GaAs structures has been demonstrated.

Temperature dependence of transport properties of InN films

2005 ◽  
Vol 892 ◽  
Author(s):  
J.S. Thakur ◽  
R. Naik ◽  
Vaman M Naik ◽  
D. Haddad ◽  
G.W. Auner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Electron Scattering ◽  
Carrier Density ◽  
Molecular Beam ◽  
Plasma Source ◽  
Large Temperature ◽  
Independent Mobility ◽  
Donor Acceptor ◽  
High Carrier

AbstractThe temperature dependence of Hall mobility, µ, and carrier density, Ne, for thin InN films grown by Molecular Beam Epitaxy and Plasma Source Molecular Beam Epitaxy have been investigated. For temperature up to 300 K, a large temperature-independent Ne is observed in films grown by the above two techniques. However, for higher temperatures, carrier density (Ne) increases with temperature. The characteristic behavior of the mobility for the films with low carrier density is different from that of the high carrier density film, particularly at low temperatures. The low carrier density film shows a peak ∼250 K in mobility as a function of temperature which is contrast to the temperature independent mobility observed for the high density film for T < 300 K. We have investigated theoretically the effect of concentration of donor, acceptor, and threading dislocations on the carrier mobility in these films. Various electron-scattering mechanisms for the mobility in these films have been discussed.

scholarly journals Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

2012 ◽  
Vol 111 (10) ◽  
pp. 103713 ◽  
Author(s):  
H. Y. Liu ◽  
V. Avrutin ◽  
N. Izyumskaya ◽  
Ü. Özgür ◽  
A. B. Yankovich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Scattering ◽  
Molecular Beam ◽  
Scattering Mechanisms ◽  
Sapphire Substrates

Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy

2001 ◽  
Vol 148 (5) ◽  
pp. 215-218 ◽  
Author(s):  
H.M. Ng ◽  
S.N.G. Chu ◽  
S.V. Frolov ◽  
A.Y. Cho ◽  
C. Gmachl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Scattering ◽  
Molecular Beam ◽  
Band Electron

scholarly journals Nonlinear optical diagnostics crystal structure of semiconductor films in molecular beam epitaxy

2021 ◽  
Keyword(s):  
Crystal Structure ◽  
Molecular Beam Epitaxy ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Nonlinear Optical ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Universal Method ◽  
Semiconductor Films ◽  
Control And Management

The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the struc-tural perfection of semiconductor films during their synthesis in an MBE device for second harmonic generation (SH) using a repetitively pulsed YAG: Nd laser is presented.

Plasma excited molecular beam epitaxy－proposal and achievements through R&D of compound semiconductor materials and devices－

2021 ◽  
Author(s):  
Yasushi Nanishi ◽  
Tomohiro YAMAGUCHI
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Molecular Beams ◽  
Surface Cleaning ◽  
Temperature Growth ◽  
Device Structures ◽  
Unique Material ◽  
Impurity Doping ◽  
Low Dimensional

Abstract This paper reviews 35 years of brief history on plasma-excited molecular beam epitaxy, focusing on special values added to conventional Molecular Beam Epitaxy (MBE) through usage of plasma-excited molecular beams. These include low temperature surface cleaning, low temperature growth, selected area re-growth and impurity doping. These technologies are extremely important to realize nano-scale low-dimensional device structures. InN and In-rich InGaN are also highlighted as unique material systems, which plasma-excited MBE process is inevitable to grow. Future prospect of this technology will also be included from the device application viewpoints.

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