Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy

2001 ◽  
Vol 148 (5) ◽  
pp. 215-218 ◽  
Author(s):  
H.M. Ng ◽  
S.N.G. Chu ◽  
S.V. Frolov ◽  
A.Y. Cho ◽  
C. Gmachl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Scattering ◽  
Molecular Beam ◽  
Band Electron

Temperature dependence of transport properties of InN films

2005 ◽  
Vol 892 ◽  
Author(s):  
J.S. Thakur ◽  
R. Naik ◽  
Vaman M Naik ◽  
D. Haddad ◽  
G.W. Auner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Electron Scattering ◽  
Carrier Density ◽  
Molecular Beam ◽  
Plasma Source ◽  
Large Temperature ◽  
Independent Mobility ◽  
Donor Acceptor ◽  
High Carrier

AbstractThe temperature dependence of Hall mobility, µ, and carrier density, Ne, for thin InN films grown by Molecular Beam Epitaxy and Plasma Source Molecular Beam Epitaxy have been investigated. For temperature up to 300 K, a large temperature-independent Ne is observed in films grown by the above two techniques. However, for higher temperatures, carrier density (Ne) increases with temperature. The characteristic behavior of the mobility for the films with low carrier density is different from that of the high carrier density film, particularly at low temperatures. The low carrier density film shows a peak ∼250 K in mobility as a function of temperature which is contrast to the temperature independent mobility observed for the high density film for T < 300 K. We have investigated theoretically the effect of concentration of donor, acceptor, and threading dislocations on the carrier mobility in these films. Various electron-scattering mechanisms for the mobility in these films have been discussed.

scholarly journals Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

2012 ◽  
Vol 111 (10) ◽  
pp. 103713 ◽  
Author(s):  
H. Y. Liu ◽  
V. Avrutin ◽  
N. Izyumskaya ◽  
Ü. Özgür ◽  
A. B. Yankovich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Scattering ◽  
Molecular Beam ◽  
Scattering Mechanisms ◽  
Sapphire Substrates

Atomic and Molecular Beams Control in Molecular Beam Epitaxy

2021 ◽  
Vol 23 (1) ◽  
pp. 47-56
Author(s):  
N.A. Kulchitsky ◽  
◽  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Scattering ◽  
Molecular Beam ◽  
Rapid Development ◽  
Molecular Beams ◽  
Mass Spectrometric ◽  
Universal Method ◽  
Fast Electrons ◽  
Growth Chambers ◽  
Special Growth

Rapid development of molecular beam epitaxy (MBE) in recent decades has led to the emergence of a variety of technological installations, as well as electronic and optical diagnostics of growing layers, as well as atomic and molecular beams. Known methods for monitoring atomic and molecular beams in MBE installations-mass spectrometric and luminescent - involve bulky sensors, which can only be placed in special growth chambers. This paper describes a structurally simple and fairly universal method for determining the intensities of atomic and molecular beams, based on registering the amount of electron scattering at small angles that occur when a narrow electron beam interacts with the atoms of a vaporized substance. We consider the theoretical prerequisites for the diagnosis of an atomic beam by the phenomenon of scattering of fast electrons in it.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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