Angular distribution of molecular beams from modified Knudsen cells for molecular‐beam epitaxy

1978 ◽  
Vol 15 (1) ◽  
pp. 10-12 ◽  
Author(s):  
L. Y. L. Shen
Keyword(s):  
Angular Distribution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beams

Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Passlack ◽  
M. Hong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beams ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
In Situ Deposition ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractWe have extended the spectrum of molecular-beam epitaxy (MBE) related techniques by introducing in-situ deposition of oxides. The oxide films have been deposited on clean, atomically ordered (100) GaAs wafer surfaces using molecular beams of gallium-, magnesium-, silicon-, or aluminum oxide. Among the fabricated oxide-GaAs heterostructures, Ga2O3-GaAs interfaces exhibit unique electronic properties including an interface state density Dit in the low 1010 cm−2eV−1 range and an interface recombination velocity S of 4000 cm/s. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Further, thermodynamic and photochemical stability of excellent electronic interface properties of Ga2O3-GaAs structures has been demonstrated.

Plasma excited molecular beam epitaxy－proposal and achievements through R&D of compound semiconductor materials and devices－

2021 ◽  
Author(s):  
Yasushi Nanishi ◽  
Tomohiro YAMAGUCHI
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Molecular Beams ◽  
Surface Cleaning ◽  
Temperature Growth ◽  
Device Structures ◽  
Unique Material ◽  
Impurity Doping ◽  
Low Dimensional

Abstract This paper reviews 35 years of brief history on plasma-excited molecular beam epitaxy, focusing on special values added to conventional Molecular Beam Epitaxy (MBE) through usage of plasma-excited molecular beams. These include low temperature surface cleaning, low temperature growth, selected area re-growth and impurity doping. These technologies are extremely important to realize nano-scale low-dimensional device structures. InN and In-rich InGaN are also highlighted as unique material systems, which plasma-excited MBE process is inevitable to grow. Future prospect of this technology will also be included from the device application viewpoints.

Atomic and Molecular Beams Control in Molecular Beam Epitaxy

2021 ◽  
Vol 23 (1) ◽  
pp. 47-56
Author(s):  
N.A. Kulchitsky ◽  
◽  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Scattering ◽  
Molecular Beam ◽  
Rapid Development ◽  
Molecular Beams ◽  
Mass Spectrometric ◽  
Universal Method ◽  
Fast Electrons ◽  
Growth Chambers ◽  
Special Growth

Rapid development of molecular beam epitaxy (MBE) in recent decades has led to the emergence of a variety of technological installations, as well as electronic and optical diagnostics of growing layers, as well as atomic and molecular beams. Known methods for monitoring atomic and molecular beams in MBE installations-mass spectrometric and luminescent - involve bulky sensors, which can only be placed in special growth chambers. This paper describes a structurally simple and fairly universal method for determining the intensities of atomic and molecular beams, based on registering the amount of electron scattering at small angles that occur when a narrow electron beam interacts with the atoms of a vaporized substance. We consider the theoretical prerequisites for the diagnosis of an atomic beam by the phenomenon of scattering of fast electrons in it.

Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds

1989 ◽  
Vol 169 ◽  
Author(s):  
D.G. Schlomtt ◽  
J.N. Eckstein ◽  
I. Bozo Vic ◽  
A.F. Marshall ◽  
J.T. Sizemore ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Cuprate Superconductors ◽  
Molecular Beams ◽  
Atomic Scale ◽  
Superconducting Film ◽  
Mbe Growth

AbstractThe in situ epitaxial growth of Bi‐Sr‐Ca‐Cu‐O films by molecular beam epitaxy (MBE) is reported. The suitability of ozone to the MBE growth of cuprate superconductors is discussed. Molecular beams of the constituents were periodically shuttered to grow various Bi2Sr2Can‐1CunOx phases, including 2201, 2212,2223,2245, and layered mixtures of these phases. Using these techniques a superconducting film with TConset near 100 K and Tc (ρ=0) of 81 K was achieved under entirely MBE conditions (Pchamber≤xl0‐4 Torr during growth and cooling). The films are smooth on an atomic scale. The results demonstrate the ability of shuttered MBE growth to selectively grow Bi2Sr2Can‐1CunOx phases.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

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