Silicon Nitride Thin Film Deposition for Microelectronics and Microsystems Technologies. Part 8. Hydrogen Influence on Basic Film Properties

2019 ◽  
Vol 21 (6) ◽  
pp. 352-367
Author(s):  
V.Yu. Vasilyev ◽  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Properties

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics

1999 ◽  
Vol 567 ◽  
Author(s):  
T.P. Ma
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Jet Vapor Deposition ◽  
Mos Gate

ABSTRACTThe principle and practice of the Jet-Vapor Deposition (JVD) technique for thin-film deposition will be introduced, followed by a presentation of the properties of ultra-thin JVD silicon nitride (designated SiN in this paper) as advanced MOS gate dielectric. Recent results on the JVD TiO2/SiN gate stack will also be presented

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