Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage

2016 ◽  
Vol E99.C (5) ◽  
pp. 522-527 ◽  
Author(s):  
Norihide KASHIO ◽  
Takuya HOSHI ◽  
Kenji KURISHIMA ◽  
Minoru IDA ◽  
Hideaki MATSUZAKI
Keyword(s):  
Breakdown Voltage ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Type Ii ◽  
Double Heterojunction

scholarly journals InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage

2019 ◽  
Vol 16 (3) ◽  
pp. 20181125-20181125 ◽  
Author(s):  
Takuya Hoshi ◽  
Norihide Kashio ◽  
Yuta Shiratori ◽  
Kenji Kurishima ◽  
Minoru Ida ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction

Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1131-1135 ◽  
Author(s):  
Colombo R. Bolognesi ◽  
Martin W. Dvorak ◽  
Noureddine Matine ◽  
Oliver J. Pitts ◽  
Simon P. Watkins
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Type Ii ◽  
Double Heterojunction

Type-II InP/GaAsSb double-heterojunction bipolar transistors withfMAX> 700 GHz

2014 ◽  
Vol 7 (3) ◽  
pp. 034105 ◽  
Author(s):  
Ralf Flückiger ◽  
Rickard Lövblom ◽  
Maria Alexandrova ◽  
Olivier Ostinelli ◽  
Colombo R. Bolognesi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Type Ii ◽  
Double Heterojunction
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