Kirk effect mechanism in type-II InP∕GaAsSb double heterojunction bipolar transistors

N. G. Tao; C. R. Bolognesi

doi:10.1063/1.2783764

Kirk effect mechanism in type-II InP∕GaAsSb double heterojunction bipolar transistors

Journal of Applied Physics ◽

10.1063/1.2783764 ◽

2007 ◽

Vol 102 (6) ◽

pp. 064511 ◽

Cited By ~ 4

Author(s):

N. G. Tao ◽

C. R. Bolognesi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Type Ii ◽

Effect Mechanism ◽

Kirk Effect ◽

Double Heterojunction

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Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.1131 ◽

2002 ◽

Vol 41 (Part 1, No. 2B) ◽

pp. 1131-1135 ◽

Cited By ~ 32

Author(s):

Colombo R. Bolognesi ◽

Martin W. Dvorak ◽

Noureddine Matine ◽

Oliver J. Pitts ◽

Simon P. Watkins

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Type Ii ◽

Double Heterojunction

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Two-dimensional simulation of type-II InP/GaAsSb/InP double heterojunction bipolar transistors

physica status solidi (c) ◽

10.1002/pssc.200674269 ◽

2007 ◽

Vol 4 (5) ◽

pp. 1675-1679 ◽

Cited By ~ 1

Author(s):

N. G. M. Tao ◽

H. G. Liu ◽

C. R. Bolognesi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Type Ii ◽

Two Dimensional ◽

Double Heterojunction ◽

Dimensional Simulation

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Effect of collector‐base valence‐band discontinuity on Kirk effect in double‐heterojunction bipolar transistors

Applied Physics Letters ◽

10.1063/1.106115 ◽

1991 ◽

Vol 59 (17) ◽

pp. 2162-2164 ◽

Cited By ~ 23

Author(s):

B. Mazhari ◽

H. Morkoç

Keyword(s):

Valence Band ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Kirk Effect ◽

Double Heterojunction ◽

Valence Band Discontinuity

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Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts48439.2020.9392903 ◽

2020 ◽

Author(s):

Yuta Shiratori ◽

Takuya Hoshi ◽

Hideaki Matsuzaki

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Speed ◽

Bipolar Transistors ◽

Type Ii ◽

Ultra High Speed ◽

Double Heterojunction

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Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage

IEICE Transactions on Electronics ◽

10.1587/transele.e99.c.522 ◽

2016 ◽

Vol E99.C (5) ◽

pp. 522-527 ◽

Cited By ~ 2

Author(s):

Norihide KASHIO ◽

Takuya HOSHI ◽

Kenji KURISHIMA ◽

Minoru IDA ◽

Hideaki MATSUZAKI

Keyword(s):

Breakdown Voltage ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Type Ii ◽

Double Heterojunction

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Type-II InP/GaAsSb double-heterojunction bipolar transistors withfMAX> 700 GHz

Applied Physics Express ◽

10.7567/apex.7.034105 ◽

2014 ◽

Vol 7 (3) ◽

pp. 034105 ◽

Cited By ~ 18

Author(s):

Ralf Flückiger ◽

Rickard Lövblom ◽

Maria Alexandrova ◽

Olivier Ostinelli ◽

Colombo R. Bolognesi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Type Ii ◽

Double Heterojunction

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Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz

Applied Physics Letters ◽

10.1063/1.2207843 ◽

2006 ◽

Vol 88 (22) ◽

pp. 222101 ◽

Cited By ~ 21

Author(s):

William Snodgrass ◽

Bing-Ruey Wu ◽

Walid Hafez ◽

K. Y. Cheng ◽

Milton Feng

Keyword(s):

Heterojunction Bipolar Transistors ◽

Performance Enhancement ◽

Bipolar Transistors ◽

Type Ii ◽

Double Heterojunction

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17 Gbit/s pin-PD/decision circuit using InP/InGaAs double-heterojunction bipolar transistors

Electronics Letters ◽

10.1049/el:19960253 ◽

1996 ◽

Vol 32 (4) ◽

pp. 393 ◽

Cited By ~ 5

Author(s):

M. Yoneyama ◽

E. Sano ◽

S. Yamahata ◽

Y. Matsuoka ◽

M. Yaita

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction ◽

Decision Circuit

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Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

Journal of Applied Physics ◽

10.1063/5.0054197 ◽

2021 ◽

Vol 130 (3) ◽

pp. 034502

Author(s):

Xin Wen ◽

Akshay Arabhavi ◽

Wei Quan ◽

Olivier Ostinelli ◽

Chhandak Mukherjee ◽

...

Keyword(s):

Performance Prediction ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction ◽

Thz Applications

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Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

IEEE Electron Device Letters ◽

10.1109/led.2009.2030373 ◽

2009 ◽

Vol 30 (11) ◽

pp. 1119-1121 ◽

Cited By ~ 8

Author(s):

Shyh-Chiang Shen ◽

Yi-Che Lee ◽

Hee-Jin Kim ◽

Yun Zhang ◽

Suk Choi ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction ◽

Surface Leakage

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