Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
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Published By IEEE

0780308948

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Metamorphic In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As layer on GaAs: a new structure for millimeter wave ICs

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303125 ◽

2002 ◽

Cited By ~ 1

Author(s):

P. Win ◽

Y. Druelle ◽

A. Cappy ◽

Y. Cordier ◽

D. Adam ◽

...

Keyword(s):

Millimeter Wave

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Planar cold cathodes

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303097 ◽

2002 ◽

Author(s):

U.K. Mishra ◽

Wei-Nan Jiang

Keyword(s):

Cold Cathodes

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Effect of high field electron transport characteristics on transistor performance in InGaAs/InAlAs heterostructures

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303096 ◽

2002 ◽

Cited By ~ 1

Author(s):

J. Zahurak ◽

A.A. Iliadis ◽

S.A. Rishton ◽

W.T. Masselink

Keyword(s):

Electron Transport ◽

High Field ◽

Field Electron

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Structure and simulation of GaAs TUNNETT and MITATT devices for frequencies above 100 GHz

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303087 ◽

2002 ◽

Cited By ~ 2

Author(s):

Chien-Chung Chen ◽

R.K. Mains ◽

G.I. Haddad ◽

H. Eisele

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A new resonant tunneling transistor fabricated by cleaved edge overgrowth

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303095 ◽

2002 ◽

Author(s):

C. Kurdak ◽

D.C. Tsui ◽

S. Parihar ◽

H. Manoharan ◽

S.A. Lyon ◽

...

Keyword(s):

Resonant Tunneling

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High temperature operation of n-type 6H-SiC and p-type diamond MESFETs

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303116 ◽

2002 ◽

Cited By ~ 3

Author(s):

M.W. Shin ◽

G.L. Bilbro ◽

R.J. Trew

Keyword(s):

High Temperature ◽

P Type ◽

High Temperature Operation

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New analytic determination of f/sub T/, f/sub MAX/ and the frequency dependence of current gain and power gain in HBTs

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303071 ◽

2002 ◽

Cited By ~ 4

Author(s):

D.R. Pehlke ◽

D. Pavlidis

Keyword(s):

Frequency Dependence ◽

Current Gain ◽

Power Gain ◽

Analytic Determination

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Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTs

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303072 ◽

2002 ◽

Cited By ~ 11

Author(s):

B. Bayraktaroglu ◽

R. Fitch ◽

J. Barrette ◽

R. Scherer ◽

L. Kehias ◽

...

Keyword(s):

Microwave Power ◽

Thermally Stable

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Luminescence from Si-based materials and devices

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303065 ◽

2002 ◽

Author(s):

J.C. Campbell ◽

K.-H. Li ◽

C. Tsai

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Application of the first-order bipolar model to harmonic distortion analysis of HBT's

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1993.303093 ◽

2002 ◽

Cited By ~ 1

Author(s):

B. Meskoob ◽

S. Prasad

Keyword(s):

Harmonic Distortion ◽

First Order ◽

Distortion Analysis

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and CircuitsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Metamorphic In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As layer on GaAs: a new structure for millimeter wave ICs

Planar cold cathodes

Effect of high field electron transport characteristics on transistor performance in InGaAs/InAlAs heterostructures

Structure and simulation of GaAs TUNNETT and MITATT devices for frequencies above 100 GHz

A new resonant tunneling transistor fabricated by cleaved edge overgrowth

High temperature operation of n-type 6H-SiC and p-type diamond MESFETs

New analytic determination of f/sub T/, f/sub MAX/ and the frequency dependence of current gain and power gain in HBTs

Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTs

Luminescence from Si-based materials and devices

Application of the first-order bipolar model to harmonic distortion analysis of HBT's

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Latest Publications