scholarly journals Investigation of bilayer HfNx gate insulator utilizing ECR plasma sputtering

2016 ◽  
Vol 13 (10) ◽  
pp. 20160054-20160054 ◽  
Author(s):  
Nithi Atthi ◽  
Shun-ichiro Ohmi
Keyword(s):  
Gate Insulator ◽  
Ecr Plasma ◽  
Plasma Sputtering

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

2014 ◽  
Vol E97.C (5) ◽  
pp. 413-418 ◽  
Author(s):  
Dae-Hee HAN ◽  
Shun-ichiro OHMI ◽  
Tomoyuki SUWA ◽  
Philippe GAUBERT ◽  
Tadahiro OHMI
Keyword(s):  
Surface Roughness ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering

Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering

2014 ◽  
Vol 1588 ◽  
Author(s):  
Nithi Atthi ◽  
Dae-Hee Han ◽  
Shun-ichiro Ohmi
Keyword(s):  
Cyclotron Resonance ◽  
Interfacial Layer ◽  
Electron Cyclotron Resonance ◽  
Interface Layer ◽  
Orientation Dependence ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering ◽  
Density Of Interface States

ABSTRACTThis paper investigated the silicon substrate orientation dependence on the electrical properties of high-κ HfN gate insulator formed by electron-cyclotron-resonance (ECR) plasma sputtering. The effect of N2/4.9%H2 forming-gas annealing (FGA) was studied. By using N2/4.9%H2 FGA at 500°C for 20 min, the interfacial layer (IL) formation was not formed and led to the zero-interface layer (ZIL). The EOTs of 0.47 and 0.51 nm with leakage current of 1.1 and 1.4 A/cm2 (@VFB -1 V) were obtained on p-Si(100) and p-Si(110), respectively. The density of interface states (Dit) with the order of 1011 cm-2eV-1 was obtained on both p-Si(100) and p-Si(110). This suggests that the direct deposition of HfN film with ZIL prevented the degradation of electrical characteristics on the p-Si(100) and p-Si(110) substrate in comparison to the case of oxide-based hafnium gate insulator.

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

Preparation of high quality strontium titanate based thin films by ECR plasma sputtering

2003 ◽  
Vol 169-170 ◽  
pp. 27-31 ◽  
Author(s):  
Shoji Miyake ◽  
So Baba ◽  
Atsutoshi Niino ◽  
Ken Numata
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
High Quality ◽  
Ecr Plasma ◽  
Plasma Sputtering

Preparation of hydrogenated amorphous silicon by ECR plasma sputtering and the effect on retinoic acid and membrane protein polypeptides

2003 ◽  
Vol 438-439 ◽  
pp. 90-96 ◽  
Author(s):  
Yutaka Tsujiuchi ◽  
Junya Suto ◽  
Kenji Goto ◽  
Shigeki Shibata ◽  
Tadashi Ishimaru ◽  
...  
Keyword(s):  
Retinoic Acid ◽  
Membrane Protein ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Ecr Plasma ◽  
Plasma Sputtering ◽  
Hydrogenated Amorphous

Preparation And Characterization Of Carbon Nitride Thin Films By Electron Cyclotron Resonance (Ecr) Sputtering Method

1998 ◽  
Vol 555 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Youji Tani ◽  
Masaaki Hisa ◽  
Eiji Kamijo
Keyword(s):  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Cyclotron Resonance ◽  
Carbon Nitride ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
X Ray ◽  
Ecr Plasma ◽  
Plasma Sputtering ◽  
Gas Atmosphere

AbstractCrystalline carbon nitride films were deposited by electron cyclotron resonance (ECR) plasma sputtering method using a carbon target and a nitrogen gas atmosphere. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and X-ray diffraction (XRD). Nitrogen content of the deposited film was varied with substrate selfbias potential and substrate temperature. Bonding states of nitrogen and carbon in the deposited filns were different according to the substrate temperature, sp3 C-N bonds were observed for the film deposited at 600 °C. Crystallization of carbon nitride thin film was observed hen the deposition was carried out an elevated substrate temperature.

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