scholarly journals High temperature switching operation of a power diamond Schottky barrier diode

2012 ◽  
Vol 9 (24) ◽  
pp. 1835-1841 ◽  
Author(s):  
Tsuyoshi Funaki ◽  
Makiko Hirano ◽  
Hitoshi Umezawa ◽  
Shinichi Shikata
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Switching Operation

Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress

2019 ◽  
Vol 130 ◽  
pp. 233-240
Author(s):  
Sheng Li ◽  
Chi Zhang ◽  
Siyang Liu ◽  
Jiaxing Wei ◽  
Long Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
Bias Stress

Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode

2011 ◽  
Vol 679-680 ◽  
pp. 820-823 ◽  
Author(s):  
Tsuyoshi Funaki ◽  
Kazuya Kodama ◽  
Hitoshi Umezawa ◽  
Shinichi Shikata
Keyword(s):  
Band Gap ◽  
Schottky Barrier ◽  
Wide Band ◽  
Schottky Barrier Diode ◽  
Wide Band Gap ◽  
Power Switching ◽  
Switching Operation ◽  
Fast Switching ◽  
P Type

Wide band gap semiconductors have been attracted as the material for fabricating power switching devices to obtain lower power conversion loss in high voltage circuit, and to operate harsh environment of high temperature. This paper focuses on diamond as the wide band gap semiconductor material and elucidates the dynamic characteristics in switching operation. To this end, Schottky barrier diode (SBD) is fabricated with p type diamond semiconductor and static I-V characteristics is evaluated. Then, the switching operation of diamond SBD is demonstrated, and forward current dependency of the recovery phenomena is characterized. The diamond SBDs show superior fast switching capability with low reverse recovery current, which is inherent in uni-polar switching device.

A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

2005 ◽  
Vol 26 (2) ◽  
pp. 99-101 ◽  
Author(s):  
T. Nakamura ◽  
T. Miyanagi ◽  
I. Kamata ◽  
T. Jikimoto ◽  
H. Tsuchida
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode

High-Temperature Behaviors of GaN Schottky Barrier Diode

1998 ◽  
Author(s):  
Kouichi Nakamura ◽  
Hiroyasu Ishikawa ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode
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