A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

2005 ◽  
Vol 26 (2) ◽  
pp. 99-101 ◽  
Author(s):  
T. Nakamura ◽  
T. Miyanagi ◽  
I. Kamata ◽  
T. Jikimoto ◽  
H. Tsuchida
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode

scholarly journals High temperature switching operation of a power diamond Schottky barrier diode

2012 ◽  
Vol 9 (24) ◽  
pp. 1835-1841 ◽  
Author(s):  
Tsuyoshi Funaki ◽  
Makiko Hirano ◽  
Hitoshi Umezawa ◽  
Shinichi Shikata
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Switching Operation

Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress

2019 ◽  
Vol 130 ◽  
pp. 233-240
Author(s):  
Sheng Li ◽  
Chi Zhang ◽  
Siyang Liu ◽  
Jiaxing Wei ◽  
Long Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
Bias Stress

High-Temperature Behaviors of GaN Schottky Barrier Diode

1998 ◽  
Author(s):  
Kouichi Nakamura ◽  
Hiroyasu Ishikawa ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode
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