Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High-Temperature Atomic Layer-Deposited Al2O3 Layer

2019 ◽  
Vol 66 (1) ◽  
pp. 324-329 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Ki-Sik Im ◽  
Jong Kyu Kim ◽  
Jung-Hee Lee
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Atomic Layer ◽  
Schottky Barrier Diode ◽  
Al2o3 Layer

scholarly journals Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 87
Author(s):  
Jae-Hoon Lee ◽  
Jung-Hee Lee ◽  
Ki-Sik Im
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Surface States ◽  
Atomic Layer ◽  
Schottky Barrier Diodes ◽  
Al2o3 Layer ◽  
Large Bulk ◽  
Surface Leakage

AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al2O3 layers were investigated. Current–voltage (I–V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and capacitance–voltage (C–V) measurements were conducted in order to find the leakage current mechanism and reduce the reverse leakage current. The fabricated AlGaN/GaN SBDs with high Al composition exhibited two orders’ higher leakage current compared to the device with low Al composition (20%) due to large bulk and surface leakage components. The leakage current measured at −60 V for the fabricated SBD with Al2O3 deposited at temperature of 550 °C was decreased to 1.5 μA, compared to the corresponding value of 3.2 mA for SBD with nonpassivation layer. The high quality ALD Al2O3 deposited at high temperature with low interface trap density reduces the donorlike surface states, which effectively decreases surface leakage current of the AlGaN/GaN SBD.

scholarly journals High temperature switching operation of a power diamond Schottky barrier diode

2012 ◽  
Vol 9 (24) ◽  
pp. 1835-1841 ◽  
Author(s):  
Tsuyoshi Funaki ◽  
Makiko Hirano ◽  
Hitoshi Umezawa ◽  
Shinichi Shikata
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Switching Operation

Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress

2019 ◽  
Vol 130 ◽  
pp. 233-240
Author(s):  
Sheng Li ◽  
Chi Zhang ◽  
Siyang Liu ◽  
Jiaxing Wei ◽  
Long Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
Bias Stress

A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

2005 ◽  
Vol 26 (2) ◽  
pp. 99-101 ◽  
Author(s):  
T. Nakamura ◽  
T. Miyanagi ◽  
I. Kamata ◽  
T. Jikimoto ◽  
H. Tsuchida
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode

High-Temperature Behaviors of GaN Schottky Barrier Diode

1998 ◽  
Author(s):  
Kouichi Nakamura ◽  
Hiroyasu Ishikawa ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode
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