scholarly journals Characterization of P-hit and N-hit single-event transient using heavy ion microbeam

2019 ◽  
Vol 16 (8) ◽  
pp. 20190141-20190141 ◽  
Author(s):  
Ruiqiang Song ◽  
Jinjin Shao ◽  
Bin Liang ◽  
Yaqing Chi ◽  
Jianjun Chen
Keyword(s):  
Heavy Ion ◽  
Single Event ◽  
Single Event Transient

Characterization of Single-Event Transient Pulse Broadening Effect in 65 nm Bulk Inverter Chains Using Heavy Ion Microbeam

2017 ◽  
Vol 64 (1) ◽  
pp. 119-124 ◽  
Author(s):  
Yaqing Chi ◽  
Ruiqiang Song ◽  
Shuting Shi ◽  
Biwei Liu ◽  
Li Cai ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Single Event ◽  
Single Event Transient ◽  
Pulse Broadening

scholarly journals The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

Symmetry ◽  
2019 ◽  
Vol 11 (2) ◽  
pp. 154 ◽  
Author(s):  
Jizuo Zhang ◽  
Jianjun Chen ◽  
Pengcheng Huang ◽  
Shouping Li ◽  
Liang Fang
Keyword(s):  
Integrated Circuit ◽  
Semiconductor Device ◽  
Transient State ◽  
Heavy Ion ◽  
Sensitive Volume ◽  
Substrate Noise ◽  
Single Event ◽  
Transient Effects ◽  
Single Event Transient ◽  
Cosmic Particle

In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particle can deposit enough charge in the sensitive volume of a semiconductor device to cause a potential change in the transient state, that is, a single-event transient (SET). In this study, a quantitative characterization of the effect of a DNW on a SET in a 65 nm triple-well NMOSFET was performed using heavy ion experiments. Compared with a bulk NMOSFET, the experimental data show that the percentages of average increase of a SET pulse width are 22% (at linear energy transfer (LET) = 37.4 MeV·cm2/mg) and 23% (at LET = 22.2 MeV·cm2/mg) in a triple-well NMOSFET. This study indicates that a triple-well NMOSFET is more sensitive to a SET, which means that it may not be appropriate for radiation hardened integrated circuit design compared with a bulk NMOSFET.

scholarly journals Heavy Ion Induced Single Event Effects Characterization on an RF-Agile Transceiver for Flexible Multi-Band Radio Systems in NewSpace Avionics

Aerospace ◽  
2020 ◽  
Vol 7 (2) ◽  
pp. 14
Author(s):  
Jan Budroweit ◽  
Mattis Jaksch ◽  
Rubén Garcia Alía ◽  
Andrea Coronetti ◽  
Alexander Kölpin
Keyword(s):  
Heavy Ion ◽  
Soft Error ◽  
Single Event ◽  
Test Procedures ◽  
Testing Procedures ◽  
Space Industry ◽  
Radiation Test ◽  
Radio Systems ◽  
Application Requirements

Nowadays, technologies have a massive impact on the design of avionic systems, even for the conservative space industry. In this paper, the single event effect (SEE) characterization of a highly integrated and radio frequency (RF) agile transceiver is being presented which is an outstanding candidate for future radio systems in NewSpace applications and space avionics. The device being investigated allows programmable re-configuration of RF specifications, where classical software-defined radios (SDR) only define an on-demand re-configuration of the signal processing. RF related configurations are untouched for common SDR and developed discretely by the specific application requirements. Due to the high integrity and complexity of the device under test (DUT), state-of-the-art radiation test procedures are not applicable and customized testing procedures need to be developed. The DUT shows a very robust response to linear energy transfer (LET) values up to 62.5 MeV.cm²/mg, without any destructives events and a moderate soft error rate.

Single-event transient (SET) characterization of an LM119 voltage comparator: an approach to SET model validation using a pulsed laser

2002 ◽  
Vol 49 (3) ◽  
pp. 1502-1508 ◽  
Author(s):  
S. Buchner ◽  
D. McMorrow ◽  
A. Sternberg ◽  
L. Massengill ◽  
R.L. Pease ◽  
...  
Keyword(s):  
Model Validation ◽  
Pulsed Laser ◽  
Single Event ◽  
Single Event Transient ◽  
Voltage Comparator

scholarly journals On-Chip Characterization of Single-Event Transient Pulsewidths

2006 ◽  
Vol 6 (4) ◽  
pp. 542-549 ◽  
Author(s):  
Balaji Narasimham ◽  
Vishwa Ramachandran ◽  
Bharat L. Bhuva ◽  
Ronald D. Schrimpf ◽  
Arthur F. Witulski ◽  
...  
Keyword(s):  
Single Event ◽  
Single Event Transient ◽  
On Chip
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