Preparation And Characterization Of Carbon Nitride Thin Films By Electron Cyclotron Resonance (Ecr) Sputtering Method

1998 ◽  
Vol 555 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Youji Tani ◽  
Masaaki Hisa ◽  
Eiji Kamijo

AbstractCrystalline carbon nitride films were deposited by electron cyclotron resonance (ECR) plasma sputtering method using a carbon target and a nitrogen gas atmosphere. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and X-ray diffraction (XRD). Nitrogen content of the deposited film was varied with substrate selfbias potential and substrate temperature. Bonding states of nitrogen and carbon in the deposited filns were different according to the substrate temperature, sp3 C-N bonds were observed for the film deposited at 600 °C. Crystallization of carbon nitride thin film was observed hen the deposition was carried out an elevated substrate temperature.

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 5143-5147 ◽  
Author(s):  
Yasuji Muramatsu ◽  
Youji Tani ◽  
Yoshifumi Aoi ◽  
Eiji Kamijo ◽  
Takahiro Kaneyoshi ◽  
...  

1998 ◽  
Vol 13 (3) ◽  
pp. 527-529 ◽  
Author(s):  
Kaori Shima ◽  
Naoki Mitsugi ◽  
Hirotoshi Nagata

The CHF3 electron cyclotron resonance (ECR) plasma etched LiNbO3 (LN) surface was analyzed chemically and crystallographically to investigate the dry-etch machining process for LN crystal, which was recently needed to obtain broader-band optical modulators. The etched surface was entirely covered with amorphous-like precipitates having ~70 nm diameter. These precipitates (or a part of them) were thought to be LiF from Auger electron and x-ray photoelectron spectroscopy. The results indicated that the LiF was formed and remained on the etched surface while the Nb was almost completely removed.


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