scholarly journals Current status of GaN power devices

2013 ◽  
Vol 10 (21) ◽  
pp. 20132005-20132005 ◽  
Author(s):  
Tetsu Kachi
Keyword(s):  
Current Status ◽  
Power Devices

Computational Materials Science, an Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences

1998 ◽  
Vol 537 ◽  
Author(s):  
A. Sher ◽  
M. van Schilfgaarde ◽  
M. A. Berding ◽  
S. Krishnamurthy ◽  
A.-B. Chen
Keyword(s):  
Materials Science ◽  
Current Status ◽  
Power Devices ◽  
Band Structures ◽  
Computational Materials Science ◽  
Light Emitting ◽  
Zinc Blende ◽  
Practical Engineering ◽  
Computational Materials ◽  
Valence Bands

AbstractComputational materials science has evolved in recent years into a reliable theory capable of predicting not only idealized materials and device performance properties, but also those that apply to practical engineering developments. The codes run on workstations and even now are fast enough to be useful design tools. A review will be presented of the current status of this rapidly advancing field. Examples of the accuracy of the codes are displayed by comparing the predicted atomic volumes, and cohesive and excess energies of several materials with experiment. As a further demonstration of the methods, the band structures of AIN, GaN, and InN in wurtzite and zinc blende structures will be presented. There are anomalies in the conduction and valence bands of these materials. Some consequences on light emitting and power devices made from these materials will be examined.

scholarly journals Computational Materials Science, an Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences

1999 ◽  
Vol 4 (S1) ◽  
pp. 490-501 ◽  
Author(s):  
A. Sher ◽  
M. van Schilfgaarde ◽  
M. A. Berding ◽  
S. Krishnamurthy ◽  
A.-B. Chen
Keyword(s):  
Materials Science ◽  
Current Status ◽  
Power Devices ◽  
Band Structures ◽  
Computational Materials Science ◽  
Light Emitting ◽  
Zinc Blende ◽  
Practical Engineering ◽  
Computational Materials ◽  
Valence Bands

Computational materials science has evolved in recent years into a reliable theory capable of predicting not only idealized materials and device performance properties, but also those that apply to practical engineering developments. The codes run on workstations and even now are fast enough to be useful design tools. A review will be presented of the current status of this rapidly advancing field. Examples of the accuracy of the codes are displayed by comparing the predicted atomic volumes, and cohesive and excess energies of several materials with experiment. As a further demonstration of the methods, the band structures of AlN, GaN, and InN in wurtzite and zinc blende structures will be presented. There are anomalies in the conduction and valence bands of these materials. Some consequences on light emitting and power devices made from these materials will be examined.

scholarly journals GaN Power Devices – Current Status and Future Directions

2018 ◽  
Vol 27 (4) ◽  
pp. 43-47 ◽  
Author(s):  
Travis J. Anderson ◽  
Srabanti Chowdhury ◽  
Ozgur Aktas ◽  
Michal Bockowski ◽  
Jennifer K. Hite
Keyword(s):  
Current Status ◽  
Power Devices ◽  
Future Directions
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