Spectral and Spatial Quantum Efficiency of AlGaAs/GaAs and InGaAs/InP PIN Photodiodes

2000 ◽  
Author(s):  
Steven Tabor
Keyword(s):  
Quantum Efficiency ◽  
Pin Photodiodes

Improved solar-blind external quantum efficiency of back-illuminated AlxGa1−xN heterojunction pin photodiodes

2002 ◽  
Vol 38 (15) ◽  
pp. 824 ◽  
Author(s):  
C.J. Collins ◽  
U. Chowdhury ◽  
M.M. Wong ◽  
B. Yang ◽  
A.L. Beck ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solar Blind ◽  
Pin Photodiodes ◽  
Back Illuminated

Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation

2015 ◽  
Vol 66 (5) ◽  
pp. 101-107 ◽  
Author(s):  
C. Novo ◽  
J. Baptista ◽  
M. Guazzeli da Silveira ◽  
R. Giacomini ◽  
A. Afzalian ◽  
...  
Keyword(s):  
Temperature Variation ◽  
Quantum Efficiency ◽  
Gate Bias ◽  
Back Gate ◽  
Intrinsic Length ◽  
Pin Photodiodes

The Role of Carbon in Amorphous Silicon Nip Photodiode Sensors

1990 ◽  
Vol 192 ◽  
Author(s):  
R. L. Weisfield ◽  
C. C. Tsai
Keyword(s):  
Amorphous Silicon ◽  
Quantum Efficiency ◽  
Dark Current ◽  
Spectral Response ◽  
Pin Photodiodes ◽  
Dark Currents

ABSTRACTWe have been investigating the dark current and quantum efficiency of nip and pin photodiodes for document scanning applications. Alloying the top doped layer with carbon or making it microcrystalline was found to enhance the spectral response without causing significant deleterious effects to dark current. We also observed lower dark currents in both pin and nip(μc-Si:C:H) sensors compared to nip(a-Si:C:H) sensors, which we attribute to a more graded p-i interface in the former devices.

Fabrication of very high quantum efficiency planar InGaAs PIN photodiodes through prebake process

2005 ◽  
Vol 152 (6) ◽  
pp. 637 ◽  
Author(s):  
S.-H. Chang ◽  
Y.-K. Fang ◽  
S.-F. Ting ◽  
S.-F. Chen ◽  
C.-Y. Lin ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Pin Photodiodes ◽  
Very High

scholarly journals Simulação e caracterização elétrica de dispositivos fotossensores implementados em tecnologia SOI

2020 ◽  
Author(s):  
◽  
Edson José Rodrigues
Keyword(s):  
Film Thickness ◽  
Quantum Efficiency ◽  
Linear Trend ◽  
Silicon Film ◽  
Physical Models ◽  
Light Sources ◽  
Light Emitting ◽  
Intrinsic Length ◽  
Pin Photodiodes ◽  
The Relationship

This work presents an analysis of the main performance characteristics of lateral PIN photodiodes implemented in thin layer SOI technology, when illuminated by wavelengths, in the range between blue and ultraviolet (UV), and subjected to temperature variations. Twodimensional numerical simulations were performed to analyze characteristics such as photocurrent, absorption, quantum efficiency, and responsivity. In this analysis, the influence of the variation between 40 nm and 500 nm of the silicon film thickness (tSi) and the intrinsic length region (Li) between 5 and 30 ?m was considered to evaluate the performance of the photodiode at different wavelengths, in the range blue and ultraviolet (UV). Different sets of physical models were studied in the simulations, to reproduce trends reported in the literature. Through experimental measurements of the intensities of incident powers as a function of distance, light sources were characterized using light-emitting diodes at wavelengths, UV (390 nm), violet (410 nm), and Blue (460 nm), adapted for providing light energy in the photosensitive region of experimental photodiodes also characterized for temperatures between 100 K and 400 K. The simulations show that there is a dependency relationship between the silicon film thickness and the intrinsic length region (Li), that when evaluated and scaled simultaneously it is possible to optimize the quantum efficiency and responsivity of the PIN SOI photodiodes in the definition technology for specific wavelength applications. The results show that the quantum efficiency around 28 % and responsiveness around 85 mA / W for a given technology showed the same trend as the experimental results, taking into account the wavelength and temperature range. The results also show an almost linear trend in the relationship between silicon film thickness (tSi) and absorption (light penetration depth), so that, in thinner silicon film thickness, the device will be more selective for low wavelengths, that is, closer to UV

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