The n-p Transition in YBa2Cu3O6–5+x

1987 ◽  
Vol 99 ◽  
Author(s):  
G. M. Choi ◽  
H. L. Tuller ◽  
M.-J. Tsai
Keyword(s):  
Elevated Temperatures ◽  
Unusual Behavior ◽  
Annealing Conditions ◽  
Oxygen Excess ◽  
Computer Controlled ◽  
Citrate Precursors ◽  
Power Measurements ◽  
P Type ◽  
Type Conduction

ABSTRACTThe role of annealing conditions on the equilibrium defect state of the material was investigated by computer controlled 4 probe d.c. conductivity and thermoelectric power measurements on dense homogeneous ceramics prepared from citrate precursors. At elevated temperatures, the conductivity first decreases and then increases exponentially with decreasing temperature with the conductivity minima shifting to lower temperatures with decreasing PO2. This unusual behavior is described as representing a transition from n-type to p-type conduction. The n-p transition is correlated with the corresponding stoichiometry shift upon cooling from oxygen deficient (Cu1, Cu2) to oxygen excess YBa3Cu3O6–5+x, (Cu2+, Cu3+). A preliminary defect model is proposed which provides a framework for understanding a number of the experimental observations.

scholarly journals Role of Structure and Composition on the Performances of p-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

2019 ◽  
Author(s):  
Raquel Barros ◽  
Kachirayil J. Saji ◽  
João C. Waerenborgh ◽  
Pedro Barquinha ◽  
Luis Pereira ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Spectroscopic Studies ◽  
Oxide Thin Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

This work reports the role of structure and composition on the determination of the performances of p-type SnOx TFTs deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp), between 0% and 20%, but where the p-type conduction was only observed between 2.8–3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies. The study allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used that lead to the production of TFTs with a bottom gate configuration, on glasses coated with conductive Indium Tin Oxide, followed by Aluminium Titanium Oxide dielectric layer with saturation mobility of 4.6 cm2V−1s−1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of −10 V.

scholarly journals Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 320 ◽  
Author(s):  
Raquel Barros ◽  
Kachirayil Saji ◽  
João Waerenborgh ◽  
Pedro Barquinha ◽  
Luís Pereira ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Spectroscopic Studies ◽  
Oxide Thin Film ◽  
Enhancement Mode ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

This work reports on the role of structure and composition on the determination of the performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm2 V−1 s−1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of −10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnOx TFTs with different methods and using different device configurations.

Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

2007 ◽  
Vol 22 (10) ◽  
pp. 2668-2675 ◽  
Author(s):  
Z.W. Liu ◽  
S.W. Yeo ◽  
C.K. Ong
Keyword(s):  
Hole Concentration ◽  
Film Structure ◽  
Zno Films ◽  
Zno Film ◽  
Annealing Conditions ◽  
Zinc Nitride ◽  
Alternative Approach ◽  
Oxidative Annealing ◽  
P Type ◽  
Type Conduction

N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both n- and p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400–600 °C for 10–60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn3N2) films with and without Al addition had carrier concentrations of 1021–1022 cm−3. After conversion to ZnO, the n-type films had a carrier concentrations up to 1019 cm−3, whereas the p-type ZnO:N films had hole concentrations of 1014–1016 cm−3. (Al,N)-codoping increased the hole concentration of p-type film to 1018 cm−3 despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N2 as the N source.

The effect of adding side group and changing contact geometry in single pyrene molecular devices

2018 ◽  
Vol 32 (07) ◽  
pp. 1850078
Author(s):  
M. F. Jamali ◽  
H. Rahimpour Soleimani ◽  
M. Bagheri Tagani
Keyword(s):  
Density Functional Theory ◽  
Linear Response ◽  
Density Functional ◽  
Molecular Devices ◽  
Side Group ◽  
Functional Theory ◽  
Linear Response Regime ◽  
P Type ◽  
Type Conduction

In this study, the thermopower of pyrene molecule in both symmetric and asymmetric junctions to gold electrodes and the role of adding side group have been studied using density functional theory and Green’s function formalism in the linear response regime. We have considered four different configurations and investigated the thermopower property of them. Calculations show that adding electron donating side groups to both symmetrical and anti-symmetrical junction will increase the thermopower. However, the increase is more evident in asymmetric junction. Additionally, the Seebeck coefficient sign is positive which indicates p-type conduction.

scholarly journals Defect Structure of the Mixed-Conducting Sr-Fe-Co-O System

1996 ◽  
Vol 453 ◽  
Author(s):  
B. Ma ◽  
U. Balachandran ◽  
C.-C. Chao ◽  
J.-H. Park
Keyword(s):  
Activation Energy ◽  
Defect Structure ◽  
Elevated Temperatures ◽  
Ionic Conductivities ◽  
Transition Metal Ions ◽  
Partial Pressures ◽  
Conduction Behavior ◽  
Increasing Temperature ◽  
P Type ◽  
Type Conduction

AbstractElectrical conductivity of the mixed-conducting Sr-Fe-Co-O system was investigated at elevated temperatures and various oxygen partial pressures (pO2). The system exhibits not only high combined electrical and oxygen ionic conductivities but also structural stability in both oxidizing and reducing environments. The conductivity of SrFeCo0.5Ox increases with increasing temperature and increasing pO2, within our experimental pO2 range (1 ≥ pO2 ≥ 1O-18 atm). p-type conduction behavior was observed. The activation energy of which increases with decreasing pO2. A model of the defect chemistry in the Sr-Fe-Co-O system is proposed. The pO2-dependent conducting behavior can be understood by considering the trivalent-to-divalent transition of the transition metal ions in the system.

1758-P: Type 2 Diabetes–Associated Mood Disorders: Role of Insulin Resistance in Serotonergic Neurons

Diabetes ◽  
2020 ◽  
Vol 69 (Supplement 1) ◽  
pp. 1758-P
Author(s):  
HUGO MARTIN ◽  
SÉBASTIEN BULLICH ◽  
FABIEN DUCROCQ ◽  
MARION GRALAND ◽  
CLARA OLIVRY ◽  
...  
Keyword(s):  
Insulin Resistance ◽  
Type 2 Diabetes ◽  
Mood Disorders ◽  
Serotonergic Neurons ◽  
P Type

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

LIGHT-INDUCED EXCESS CONDUCTIVITY AND THE ROLE OF ARGON IN THE DEPOSITION OF DOPING-MODULATED AMORPHOUS SILICON SUPERLATTICES.

1985 ◽  
Vol 56 ◽  
Author(s):  
F.-C. Su ◽  
S. Levine ◽  
P. E. Vanier ◽  
F. J. Kampas
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Excess Conductivity ◽  
The Novel ◽  
Semiconductor Superlattice ◽  
Deposition Parameters ◽  
Superlattice Structures ◽  
Argon Dilution ◽  
P Type

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

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