GaAs – on – Si Epitaxy: Results for Coverage of ∼ 1 Monolayer

1987 ◽  
Vol 94 ◽  
Author(s):  
R. D. Bringans ◽  
M. A. Olmstead ◽  
R. I. G. Uhrberg ◽  
R. Z. Bachrach
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Core Level ◽  
Single Domain ◽  
Island Formation ◽  
Si Substrates ◽  
Gaas On Si ◽  
Si Epitaxy

ABSTRACTCore level spectroscopy measurements have been made on Si substrates with coverages of around one monolayer of As, Ga and GaAs. The interfaces were formed on on-axis Si(100) and Si(111) substrates using molecular beam epitaxy. Results are also presented for an arsenic monolayer on a single-domain Si(100) surface prepared by cutting the crystal off-axis by 4 degrees. The strong bonding between As monolayers and the surface of the substrate causes the GaAs to begin to form islands at average coverages of less than one monolayer. The surface between the islands is found to be terminated by a single atomic layer of As. Use of a Ga predeposition technique shows evidence of reducing the tendancy towards island formation.

Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L285-L287 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates

1995 ◽  
Vol 36 (3) ◽  
pp. 271-276 ◽  
Author(s):  
M.L. Dotor ◽  
D. Golmayo ◽  
A. Calle ◽  
J.R. Sendra ◽  
J.V. Anguita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunnel Junctions ◽  
Atomic Layer ◽  
Si Substrates

Growth of Single Domain GaAs on Si(100) by Molecular Beam Epitaxy

1985 ◽  
Author(s):  
Seiji Nishi ◽  
Masahiro Akiyama ◽  
Katsuzo Kaminishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

Heteroepitaxy of Si and Ge on CaF2/Si (111)

1985 ◽  
Vol 54 ◽  
Author(s):  
R. W. Fathauer ◽  
L. J. Schowalter ◽  
N. Lewis ◽  
E. L. Hall
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Qualitative Model ◽  
Island Growth ◽  
Island Formation ◽  
Growth Studies ◽  
Si Epitaxy

ABSTRACTSi and Ge layers have been grown on CaF /Si (111) by molecular beam epitaxy (MBE). The use of thin room-tempe rature predeposits [1] with Ge epitaxy has been found to improve the growth. Studies of the initial stages of Ge epitaxy indicate that island growth occurs, and evidence also indicates island formation occurs in the Si case as well. A qualitative model is presented which explains many of the features observed in these systems and suggests reasons for the superior growth of Ge compared to Si. Finally, use of a Ge Si, /Si superlattice is shown to improve Si epitaxy.

Model of growth of single‐domain GaAs layers on double‐domain Si substrates by molecular beam epitaxy

1989 ◽  
Vol 55 (19) ◽  
pp. 1987-1989 ◽  
Author(s):  
J. Varrio ◽  
H. Asonen ◽  
J. Lammasniemi ◽  
K. Rakennus ◽  
M. Pessa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Si Substrates

A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO3/Si substrates

2021 ◽  
Author(s):  
Aleksandr V. Plokhikh ◽  
Iryna S. Golovina ◽  
Matthias Falmbigl ◽  
Igor A. Karateev ◽  
Alexander L. Vasiliev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Perovskite Oxide ◽  
Si Substrates ◽  
Layer Deposition ◽  
Superlattice Structures

We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3 deposited by hybrid molecular beam epitaxy.

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

2004 ◽  
Vol 269 (2-4) ◽  
pp. 181-186 ◽  
Author(s):  
G.X. Shi ◽  
P. Jin ◽  
B. Xu ◽  
C.M. Li ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Annealing Effect

Comparison of morphology of CdTe/CdMnTe interfaces in heterostructures grown by molecular beam epitaxy in a standard and atomic layer modes

1998 ◽  
Vol 72 (9) ◽  
pp. 1104-1106 ◽  
Author(s):  
M. Godlewski ◽  
T. Wojtowicz ◽  
G. Karczewski ◽  
J. Kossut ◽  
J. P. Bergman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer
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